Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

2005 ◽  
Vol 483-485 ◽  
pp. 405-408 ◽  
Author(s):  
R.J. Kumar ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
I. Bhat ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Decay Rate ◽  
Minority Carrier ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Decay Times ◽  
Photoconductivity Decay

A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

2005 ◽  
pp. 405-408
Author(s):  
R.J. Kumar ◽  
P.A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
I. Bhat ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Photoconductivity Decay

scholarly journals CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES

2020 ◽  
Author(s):  
Svetlana Kobeleva ◽  
Ivan Schemerov ◽  
Artem Sharapov ◽  
Sergey Yurchuk
Keyword(s):  
Diffusion Length ◽  
Decay Curve ◽  
Surface Recombination ◽  
Life Time ◽  
Free Carrier ◽  
Silicon Sample ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Photoconductivity Decay ◽  
Effective Life

Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

2006 ◽  
Vol 911 ◽  
Author(s):  
David Malta ◽  
J.R. Jenny ◽  
V.F. Tsvetkov ◽  
M. Das ◽  
St. G. Müller ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Drift Region ◽  
Disordered Lattice ◽  
High Temperature Anneal ◽  
Decay Times ◽  
Photoconductivity Decay ◽  
High Carrier

AbstractA thermal anneal process has been developed that significantly enhances minority carrier lifetime (MCL) in bulk-grown substrates. Microwave photoconductivity decay (MPCD) measurements on bulk grown substrates subjected to this process have exhibited decay times in excess of 35 μs. Electron Beam Induced Current (EBIC) measurements indicated a minority carrier diffusion length (MCDL) of 65 μm resulting in a calculated MCL of 15 μs, well within the range of that measured by MPCD. Deep level transient spectroscopic (DLTS) analysis of samples subjected to this anneal process indicated that a significant reduction of deep level defects, particularly Z1/2, may account for the significantly enhanced lifetimes. The enhanced lifetime is coincident with a transformation of the original as-grown crystal into a strained or disordered lattice configuration as a result of the high temperature anneal process. PiN diodes were fabricated employing 350 μm thick bulk-grown substrates as the intrinsic drift region and thin p- and n-type epitaxial layers on either face of the substrate to act as the anode and cathode, respectively. Conductivity modulation was achieved in these diodes with a 10x effective carrier concentration increase over the background doping as extracted from the differential on-resistance. Significant stacking fault generation observed during forward operation served as additional evidence of conductivity modulation and underscores the importance of reducing dislocation densities in substrates in order to produce a viable bulk-grown drift layer.

Detection of Nickel in Silicon by Recombination Lifetime Measurements

2007 ◽  
Vol 131-133 ◽  
pp. 183-188 ◽  
Author(s):  
Hele Savin ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
Juha Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Concentration Level ◽  
Light Illumination ◽  
Air Cooling ◽  
Recombination Activity ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
The Impact ◽  
Wafer Surfaces

The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

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