Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

2005 ◽  
Vol 483-485 ◽  
pp. 865-868
Author(s):  
Jean Marie Bluet ◽  
M. Gassoumi ◽  
I. Dermoul ◽  
F. Chekir ◽  
H. Maaref ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electron Emission ◽  
Interfacial Layer ◽  
Broad Band ◽  
Current Transient ◽  
Linear Regime ◽  
Saturation Regime ◽  
Transient Spectroscopy ◽  
Different Levels

Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.

scholarly journals Yellow Band and Deep levels in Undoped MOVPE GaN.

1996 ◽  
Vol 1 ◽  
Author(s):  
F. J. Sánchez ◽  
D. Basak ◽  
M. A. Sánchez-García ◽  
E. Calleja ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Activation Energy ◽  
Valence Band ◽  
Electron Emission ◽  
Thermal Emission ◽  
Photoluminescence Intensity ◽  
Yellow Band ◽  
Capture Process ◽  
Emission Process ◽  
Sapphire Substrates ◽  
Transient Spectroscopy

Undoped layers of GaN grown by MOVPE on sapphire substrates have been characterized by photoluminescence, photocapacitance and photoinduced current transient spectroscopy (PICTS). Photocapacitance reveals in all samples two specific signatures at photon energies of 1 eV and 2.5 eV. The photocapacitance decrease observed at 1 eV seems to be due to an electron capture process from the valence band, whereas the capacitance increase at 2.5 eV is related to an electron emission process. The fact that the capacitance step at 1 eV is only seen after photoionization at energies above 2.5 eV, and the observed correlation between its amplitude and the photoluminescence intensity of the “yellow band”, lead us to conclude that both transitions are linked to the same trap, which is also suggested to be responsible for the yellow band. The position of this trap, at 2.5 eV below the conduction band, is confirmed by PICTS measurements, that show a hole thermal emission activation energy of 0.9 eV at 350 K.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

scholarly journals Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7

2014 ◽  
Vol 44 (1) ◽  
pp. 222-226 ◽  
Author(s):  
Z. Liu ◽  
J.A. Peters ◽  
H. Li ◽  
M. G. Kanatzidis ◽  
J. Im ◽  
...  
Keyword(s):  
Single Crystal ◽  
Current Transient ◽  
Induced Current ◽  
Transient Spectroscopy

Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason
Keyword(s):  
Reverse Bias ◽  
Deep Level ◽  
Current Transient ◽  
Zero Bias ◽  
Lithium Diffusion ◽  
Transient Spectroscopy ◽  
Plasma Hydrogenation

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

Photoinduced Current Transient Spectroscopy of TlInS2Layered Crystals Doped with Er, B, and Tb Impurities

2011 ◽  
Vol 50 (5) ◽  
pp. 05FC08 ◽  
Author(s):  
MirHasan Yu. Seyidov ◽  
Rauf A. Suleymanov ◽  
Andrey P. Odrinsky ◽  
Arzu I. Nadjafov ◽  
Tofig G. Mammadov ◽  
...  
Keyword(s):  
Current Transient ◽  
Transient Spectroscopy

Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

1997 ◽  
Vol 484 ◽  
Author(s):  
A. Y. Du ◽  
M. F. Li ◽  
T. C. Chong ◽  
Z. Zhang
Keyword(s):  
Activation Energy ◽  
Layer Thickness ◽  
Deep Level ◽  
Photo Luminescence ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Trap Level ◽  
Nonradiative Recombination ◽  
Hole Trap ◽  
Transient Spectroscopy

AbstractDislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The threading dislocations in bulk layers introduce three hole trap levels HI, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap El with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67–0.73 eV. All dislocation induced traps are nonradiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers.

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