Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
2006 ◽
Vol 527-529
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pp. 1011-1014
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Keyword(s):
In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.
2005 ◽
Vol 483-485
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pp. 593-596
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Keyword(s):
2006 ◽
pp. 1011-1014
Keyword(s):
Keyword(s):
2005 ◽
pp. 593-596
Keyword(s):
2012 ◽
Vol 51
(2S)
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pp. 02BC10
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Keyword(s):
Keyword(s):
2004 ◽
Vol 457-460
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pp. 477-480
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