Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
2005 ◽
pp. 593-596
Keyword(s):
2006 ◽
pp. 1011-1014
Keyword(s):
2005 ◽
Vol 483-485
◽
pp. 593-596
◽
2004 ◽
Vol 457-460
◽
pp. 477-480
◽
Keyword(s):
2003 ◽
Vol 42
(Part 2, No. 6B)
◽
pp. L625-L627
◽
Keyword(s):
2006 ◽
Vol 527-529
◽
pp. 1011-1014
◽