Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

2006 ◽  
Vol 527-529 ◽  
pp. 79-82 ◽  
Author(s):  
Peter J. Wellmann ◽  
Desirée Queren ◽  
Ralf Müller ◽  
Sakwe Aloysius Sakwe ◽  
Ulrike Künecke

The long term performance of today’s SiC based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal plane dislocations, the latter often originating from the n-type doped SiC substrate wafer. In this paper, using sequentially p-type / n-type / p-type doped SiC crystals, we address the question, whether basal plane dislocation generation and annihilation behaves differently in n-type and p-type SiC. We have found that basal plane dislocations are absent or at least appear significantly less pronounced in p-type doped SiC, which may become of great importance for the stacking fault problem in SiC.

2007 ◽  
Vol 556-557 ◽  
pp. 259-262 ◽  
Author(s):  
Peter J. Wellmann ◽  
Philip Hens ◽  
Sakwe Aloysius Sakwe ◽  
Desirée Queren ◽  
Ralf Müller ◽  
...  

The origin of dislocation evolution during SiC crystal growth is usually related to lattice relaxation mechanisms caused by thermal stress. In this paper we discuss dislocation generation and dislocation propagation related to doping and suppression of basal plane dislocations, the latter being of particular interest for bipolar electronic devices. We have prepared alternating p-/n-/pdoped SiC crystals using the donor nitrogen and the acceptors aluminum or boron. In addition we determined the mechanical properties of n-type and p-type SiC; in particular we measured the critical shear stress by nano-indentation on c-plane and a-plane 6H-SiC surfaces. A considerably lower basal plane dislocation density is found in aluminum as well as in boron doped p-type SiC compared to nitrogen doped n-type SiC. It is concluded that the explanation of the reduced basal plane dislocation density in p-type SiC needs the consideration of electronic as well as mechanical effects.


Author(s):  
Peter J. Wellmann ◽  
Desirée Queren ◽  
Ralf Müller ◽  
Sakwe Aloysius Sakwe ◽  
Ulrike Künecke

Author(s):  
Carl Malings ◽  
Rebecca Tanzer ◽  
Aliaksei Hauryliuk ◽  
Provat K. Saha ◽  
Allen L. Robinson ◽  
...  

2008 ◽  
Vol 56 (S 1) ◽  
Author(s):  
CC Badiu ◽  
W Eichinger ◽  
D Ruzicka ◽  
I Hettich ◽  
S Bleiziffer ◽  
...  

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