Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
2006 ◽
Vol 527-529
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pp. 79-82
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Keyword(s):
P Type
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The long term performance of today’s SiC based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal plane dislocations, the latter often originating from the n-type doped SiC substrate wafer. In this paper, using sequentially p-type / n-type / p-type doped SiC crystals, we address the question, whether basal plane dislocation generation and annihilation behaves differently in n-type and p-type SiC. We have found that basal plane dislocations are absent or at least appear significantly less pronounced in p-type doped SiC, which may become of great importance for the stacking fault problem in SiC.
2007 ◽
Vol 556-557
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pp. 259-262
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Keyword(s):