Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

2009 ◽  
Vol 615-617 ◽  
pp. 695-698 ◽  
Author(s):  
Sombel Diaham ◽  
Marie Laure Locatelli ◽  
Thierry Lebey ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
...  
Keyword(s):  
Thick Film ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Electrical Characterization ◽  
Dielectric Strength ◽  
Pin Diode ◽  
Film Properties ◽  
Pin Diodes ◽  
Maximum Value

A polyimide (PI) has been used for the passivation of maximum 7.8 kV 4H-SiC P+N–N+ (PiN) diodes with a 60 µm-thick base epilayer and a junction termination extension (JTE) periphery protection. The dielectric strength of PI films is studied versus area and temperature. The reverse electrical characterization of the PI–passivated PiN diodes is presented for different natures of the environmental atmosphere. The results are compared to those obtained from same devices passivated with a deposited SiO2 thick film. The highest experimental breakdown voltages are obtained for PI–passivated PiN diodes immersed in PFPE oil, with a 5-6 kV typical value, and a 7.3 kV maximum value. Experimental observations are discussed in correlation with the insulating film properties.

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

2007 ◽  
pp. 921-924
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John Palmour ◽  
...  
Keyword(s):  
High Voltage ◽  
Basal Plane ◽  
Electrical Characterization ◽  
Pin Diodes

Electrical characterization of diamond PiN diodes for high voltage applications

2013 ◽  
Vol 210 (10) ◽  
pp. 2035-2039 ◽  
Author(s):  
Mariko Suzuki ◽  
Tadashi Sakai ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Pin Diodes

scholarly journals 600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 969-972 ◽  
Author(s):  
Gabriel Civrac ◽  
Farah Laariedh ◽  
Nicolas Thierry-Jebali ◽  
Mihai Lazar ◽  
Dominique Planson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Computer Simulations ◽  
Epitaxial Layer ◽  
Electrical Characterization ◽  
Pin Diodes ◽  
Tcad Simulations

This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltage than those expected.

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

2005 ◽  
Vol 483-485 ◽  
pp. 969-972 ◽  
Author(s):  
Koji Nakayama ◽  
Yoshitaka Sugawara ◽  
Hidekazu Tsuchida ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Pin Diode ◽  
Forward Voltage ◽  
Pin Diodes ◽  
High Breakdown Voltage ◽  
Voltage Degradation

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

Electrical Characterization of PiN Diode Structures in 6H-SiC

1992 ◽  
pp. 338-343 ◽  
Author(s):  
C. T. Gardner ◽  
J. A. Cooper ◽  
M. R. Melloch ◽  
J. W. Palmour ◽  
C. H. Carter
Keyword(s):  
Electrical Characterization ◽  
Pin Diode

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

2005 ◽  
Vol 483-485 ◽  
pp. 933-936 ◽  
Author(s):  
R. Pierobon ◽  
G. Meneghesso ◽  
E. Zanoni ◽  
Fabrizio Roccaforte ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Temperature Stability ◽  
Voltage Versus ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Schottky Rectifiers ◽  
Reverse Recovery Time

The static and dynamic electrical characterization of power Schottky rectifiers both with Ti and Ni2Si as Schottky metals having low negative coefficient of the breakdown voltage versus temperature will be presented in this paper. The values of the barrier height are respectively 1.28eV and 1.68eV, as extracted using the Tung’s model for inhomogeneous contacts from forward currentvoltage characteristics. These values were found to be in good agreement with those obtained by means of capacitance-voltage measurements. The breakdown voltage shows an almost linear dependence from the temperature for both types of devices. The extracted coefficients are respectively -0.08V/°C and -0.11V/°C, thus guarantying stable and reliable behaviour. Very short reverse recovery time at RT and at 125°C confirms the good thermal stability of these devices.

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

2012 ◽  
Vol 717-720 ◽  
pp. 977-980 ◽  
Author(s):  
Megan Snook ◽  
Ty McNutt ◽  
Chris Kirby ◽  
Harold Hearne ◽  
Victor Veliadis ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Cycle Time ◽  
Pin Diodes ◽  
Edge Termination ◽  
Comparable Performance ◽  
Process Complexity ◽  
Single Implant ◽  
The Ideal

The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexity, cycle time, and cost, a single photolithography and single implant MJTE technique has been successfully developed. The method utilizes a pattern of finely graduated oxide windows that filter the implant dose and create a graded MJTE in a single implant and single photolithography step. Based on this technique, 6 kV / 0.09 cm2 PiN diodes were fabricated utilizing a 120-zone single-implant JTE design. This novel single-implant MJTE design captures 93% of the ideal breakdown voltage and has comparable performance and yield to a baseline three implant process.

Effect of hybrid-SiO2 particles on characterization of EPDM and silicone rubber composites for outdoor high-voltage insulations

2017 ◽  
Vol 37 (7) ◽  
pp. 671-680 ◽  
Author(s):  
Hidayatullah Khan ◽  
Muhammad Amin ◽  
Muhammad Yasin ◽  
Muhammad Ali ◽  
Ayaz Ahmad
Keyword(s):  
High Voltage ◽  
Silicone Rubber ◽  
Hybrid Composites ◽  
Standard Procedure ◽  
Research Work ◽  
Dielectric Strength ◽  
Hybrid Silica ◽  
Roll Mill ◽  
Thermal And Electrical Properties

Abstract Ethylene propylene diene monomer (EPDM) and silicone rubber (SiR) are well-known polymers for high-voltage (HV) outdoor applications. In this research work, the effect of hybrid SiO2 (a mixture of 15% microsized and 5% nanosized silica) has been investigated on the mechanical, thermal, and electrical properties of EPDM and SiR composites. Using the ASTM standard procedure, the EPDM and SiR composites filled with hybrid silica were compounded by two roll mill and simple blending techniques, respectively. It was observed that with the addition of hybrid SiO2, the composites exhibited improved tensile strength of ~2500 kPa, reduced elongation at break, and enhanced hardness. The samples filled with SiR hybrid silica showed higher thermal stability and volume/surface resistivities relative to EPDM hybrid composites. However, EPDM hybrid composites showed higher dielectric strength of ~23.4 kV/mm as compared with SiR composites. From these characterization results, it can be suggested that SiR hybrid composites are more suitable for outdoor HV insulation applications.

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Electrical Characterization of High Voltage Polymer Tantalum Capacitors

2012 ◽  
Vol 159 (10) ◽  
pp. A1646-A1651 ◽  
Author(s):  
Y. Freeman ◽  
G. F. Alapatt ◽  
W. R. Harrell ◽  
P. Lessner
Keyword(s):  
High Voltage ◽  
Electrical Characterization
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