Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

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Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.362 ◽

2011 ◽

Vol 679-680 ◽

pp. 362-365 ◽

Cited By ~ 1

Author(s):

Takeshi Ohshima ◽

Naoya Iwamoto ◽

Shinobu Onoda ◽

Takahiro Makino ◽

Shinji Nozaki ◽

...

Keyword(s):

Gamma Rays ◽

Gamma Ray ◽

Ion Beam ◽

Gate Oxide ◽

Peak Amplitude ◽

Induced Current ◽

Mos Capacitors ◽

Oxygen Ion ◽

Before And After ◽

Gamma Ray Irradiation

Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC) before and after gamma-ray irradiations. The peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The decrease in the TIBIC peak eventually saturated. The TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to gate oxide. Small decrease in both the peak amplitude of TIBIC signal and collected charge was observed due to gamma-ray irradiation.

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Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2015.06.037 ◽

2015 ◽

Vol 358 ◽

pp. 188-193 ◽

Cited By ~ 24

Author(s):

S. Kaya ◽

E. Yilmaz ◽

A. Kahraman ◽

H. Karacali

Keyword(s):

Gamma Ray ◽

Frequency Dependent ◽

Mos Capacitors ◽

Gamma Ray Irradiation

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Reduction of oxide charge and interface-trap density in MOS capacitors with ITO gates

IEEE Transactions on Electron Devices ◽

10.1109/16.144680 ◽

1992 ◽

Vol 39 (8) ◽

pp. 1889-1894 ◽

Cited By ~ 3

Author(s):

C.H.L. Weijtens

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Mos Capacitors ◽

Oxide Charge

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Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) ◽

10.1109/nssmic.2009.5401822 ◽

2009 ◽

Author(s):

M.J. Tadjer ◽

K.D. Hobart ◽

R.E. Stahlbush ◽

P.J. McMarr ◽

H.L. Hughes ◽

...

Keyword(s):

Gamma Irradiation ◽

Trap Density ◽

Thermally Stimulated Current ◽

Mos Devices

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The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Radiation Physics and Chemistry ◽

10.1016/j.radphyschem.2017.06.019 ◽

2017 ◽

Vol 141 ◽

pp. 155-159 ◽

Cited By ~ 11

Author(s):

R. Lok ◽

S. Kaya ◽

H. Karacali ◽

E. Yilmaz

Keyword(s):

Gamma Ray ◽

Irradiation Effects ◽

Mos Capacitors ◽

Gamma Ray Irradiation

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Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2013.11.006 ◽

2014 ◽

Vol 319 ◽

pp. 44-47 ◽

Cited By ~ 17

Author(s):

Senol Kaya ◽

Aliekber Aktag ◽

Ercan Yilmaz

Keyword(s):

Gamma Ray ◽

Series Resistance ◽

Interface States ◽

Mos Capacitors ◽

Gamma Ray Irradiation

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Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Journal of Radioanalytical and Nuclear Chemistry ◽

10.1007/s10967-014-3295-7 ◽

2014 ◽

Vol 302 (1) ◽

pp. 425-431 ◽

Cited By ~ 18

Author(s):

Senol Kaya ◽

Ercan Yilmaz

Keyword(s):

Gamma Ray ◽

Electrical Characteristics ◽

Mos Capacitors ◽

Gamma Ray Irradiation

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Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.517 ◽

2009 ◽

Vol 615-617 ◽

pp. 517-520 ◽

Cited By ~ 5

Author(s):

Naoya Iwamoto ◽

Shinobu Onoda ◽

Takeshi Ohshima ◽

K. Kojima ◽

K. Kawano

Keyword(s):

Gamma Ray ◽

Diffusion Length ◽

Drift Diffusion Model ◽

Single Event Transient ◽

Transient Currents ◽

Drift Diffusion ◽

Mos Capacitors ◽

Oxygen Ions ◽

Oxygen Ion ◽

Gamma Ray Irradiation

Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are calculated by the transient currents. Applying the drift-diffusion model to the charges, the diffusion length of electron is estimated. Transient currents induced in the gamma ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after gamma ray irradiation.

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