Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

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Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$\kappa$ Gated MOS Devices

IEEE Electron Device Letters ◽

10.1109/led.2007.895379 ◽

2007 ◽

Vol 28 (5) ◽

pp. 432-435 ◽

Cited By ~ 6

Author(s):

Chun-Yuan Lu ◽

Kuei-Shu Chang-Liao ◽

Chun-Chang Lu ◽

Ping-Hung Tsai ◽

Tien-Ko Wang

Keyword(s):

Energy Distribution ◽

Gate Dielectric ◽

Trap Density ◽

Mos Devices

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Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2002.805407 ◽

2002 ◽

Vol 49 (6) ◽

pp. 2674-2683 ◽

Cited By ~ 101

Author(s):

D.M. Fleetwood ◽

H.D. Xiong ◽

Z.-Y. Lu ◽

C.J. Nicklaw ◽

J.A. Felix ◽

...

Keyword(s):

Unified Model ◽

Thermally Stimulated Current ◽

Hole Trapping ◽

Mos Devices

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.912365 ◽

2008 ◽

Vol 55 (2) ◽

pp. 547-556 ◽

Cited By ~ 299

Author(s):

Koen Martens ◽

Chi On Chui ◽

Guy Brammertz ◽

Brice De Jaeger ◽

Duygu Kuzum ◽

...

Keyword(s):

High Mobility ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Mos Devices ◽

Semiconductor Substrates

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An Analytical Model of MOS Admittance for Border Trap Density Extraction in High- $k$ Dielectrics of III–V MOS Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2620603 ◽

2016 ◽

Vol 63 (12) ◽

pp. 4707-4713 ◽

Cited By ~ 5

Author(s):

Abhitosh Vais ◽

Koen Martens ◽

Dennis Lin ◽

Anda Mocuta ◽

Nadine Collaert ◽

...

Keyword(s):

Analytical Model ◽

Trap Density ◽

Mos Devices ◽

High K

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Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2015.1135152 ◽

2016 ◽

Vol 171 (1-2) ◽

pp. 77-86 ◽

Cited By ~ 16

Author(s):

N. Manikanthababu ◽

N. Arun ◽

M. Dhanunjaya ◽

S.V.S. Nageswara Rao ◽

A. P. Pathak

Keyword(s):

Electrical Properties ◽

Gamma Irradiation ◽

Mos Devices

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Study of Traps in GaN by Thermally-Stimulated Current

MRS Proceedings ◽

10.1557/proc-449-633 ◽

1996 ◽

Vol 449 ◽

Author(s):

Rong Zhang ◽

Zhenchun Huang ◽

J. C. Chen ◽

Youdou Zheng ◽

T. F. Kuech

Keyword(s):

High Resistance ◽

Dark Current ◽

Time Effect ◽

Trap Density ◽

Uv Detector ◽

Thermally Stimulated Current ◽

Illumination Time ◽

Measured Range ◽

Measured Sample ◽

Major Donor

ABSTRACTIn this paper we employed the TSC method to investigate the traps in GaN. The measured sample was a M-S-M UV-detector of high-resistance GaN on sapphire grown by LP-MOCVD. The relation of dark conductance to temperature clearly showed three major donor levels at 0.019, 0.13 and 0.74eV respectively. TSC measurements from 60 to 380K indicated that there were at least 11 traps in the GaN material. The active energy of those traps were 0.15, 0.19, 0.25, 0.28, 0.33, 0.39, 0.47, 0.55, 0.60, 0.63 and 0.67eV. The range of trap density is from 6 × l014cm-3 to 2 × l018cm-3. By comparing TSC spectrum to dark current, we consider there are at least 4 hole traps in the measured range with energy of 0.25, 0.28, 0.33 and 0.39eV. The illumination time effect was studied and discussed.

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