Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
2010 ◽
Vol 645-648
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pp. 77-82
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Keyword(s):
Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.
2009 ◽
Vol 615-617
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pp. 381-384
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Keyword(s):
2008 ◽
Vol 19
(S1)
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pp. 281-284
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Keyword(s):
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