Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application

2011 ◽  
Vol 679-680 ◽  
pp. 722-725 ◽  
Author(s):  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans Peter Nee
Keyword(s):  
Voltage Drop ◽  
Short Circuit ◽  
Boost Converter ◽  
The Body ◽  
Switching Loss ◽  
Lateral Channel ◽  
Short Circuit Test ◽  
Higher Temperature ◽  
High Temperature Operation ◽  
State Resistance

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

Robustness Evaluation of High-Voltage Press-Pack IGBT Modules in Enhanced Short-Circuit Test

2012 ◽  
Vol 48 (3) ◽  
pp. 1046-1053 ◽  
Author(s):  
Filippo Chimento ◽  
Willy Hermansson ◽  
Tomas Jonsson
Keyword(s):  
High Voltage ◽  
Short Circuit ◽  
Igbt Modules ◽  
Short Circuit Test

scholarly journals Precision Evaluation of the DC Decay Method for Accurate Characterization of Wound-Field Synchronous Machines and Comparison with the Sudden Short-Circuit

2021 ◽  
Author(s):  
Frederic Maurer ◽  
Jonas Kristiansen Nøland
Keyword(s):  
Gold Standard ◽  
Short Circuit ◽  
Synchronous Machines ◽  
Identification Algorithm ◽  
Precision Evaluation ◽  
Short Circuit Test ◽  
Standard Parameter ◽  
Minimum Number ◽  
Decay Tests ◽  
Electrical Components

The sudden short-circuit is considered the gold-standard parameter measurement method for wound-field synchronous machines (WFSMs) as it enables the recording of the characteristic quantities in near-to-real conditions. However, the test needs huge pieces of equipment, but even worse, it reduces the lifetime of the electrical components by up to 10 years due to the high winding overhang mechanical forces. The DC-Decay tests are low-power alternatives to obtain the characteristic quantities without damaging the machinery. To allow wider use of this method, there are a couple of challenges left that are tackled by this paper. The two main open challenges are, firstly, the number of measurements needed to reach a particular precision, and secondly, a comparison of the DC-Decay with the sudden short-circuit test to allow the validation against the gold standard. More detailed, this paper explores the main challenges associated with the practical use of the DC decay method, which is a non-conventional and detailed-level approach to characterize WFSMs. We provide replies and recommendations regarding the number of measurements, suggesting the minimum number of recorded tests needed to obtain the equivalent diagram with a given accuracy, which has been further validated with an experimental case study. Moreover, the potential enhancement and precision of the parameter identification algorithm are studied in detail. Finally, the equivalent parameters of the DC decay method are compared to the gold standard, which concludes on what the characterization means in terms of predicting accurate transient short-circuit currents for WFSMs.

scholarly journals Precision Evaluation of the DC Decay Method for Accurate Characterization of Wound-Field Synchronous Machines and Comparison with the Sudden Short-Circuit

2021 ◽  
Author(s):  
Frederic Maurer ◽  
Jonas Kristiansen Nøland
Keyword(s):  
Gold Standard ◽  
Short Circuit ◽  
Synchronous Machines ◽  
Identification Algorithm ◽  
Precision Evaluation ◽  
Short Circuit Test ◽  
Standard Parameter ◽  
Minimum Number ◽  
Decay Tests ◽  
Electrical Components

The sudden short-circuit is considered the gold-standard parameter measurement method for wound-field synchronous machines (WFSMs) as it enables the recording of the characteristic quantities in near-to-real conditions. However, the test needs huge pieces of equipment, but even worse, it reduces the lifetime of the electrical components by up to 10 years due to the high winding overhang mechanical forces. The DC-Decay tests are low-power alternatives to obtain the characteristic quantities without damaging the machinery. To allow wider use of this method, there are a couple of challenges left that are tackled by this paper. The two main open challenges are, firstly, the number of measurements needed to reach a particular precision, and secondly, a comparison of the DC-Decay with the sudden short-circuit test to allow the validation against the gold standard. More detailed, this paper explores the main challenges associated with the practical use of the DC decay method, which is a non-conventional and detailed-level approach to characterize WFSMs. We provide replies and recommendations regarding the number of measurements, suggesting the minimum number of recorded tests needed to obtain the equivalent diagram with a given accuracy, which has been further validated with an experimental case study. Moreover, the potential enhancement and precision of the parameter identification algorithm are studied in detail. Finally, the equivalent parameters of the DC decay method are compared to the gold standard, which concludes on what the characterization means in terms of predicting accurate transient short-circuit currents for WFSMs.

scholarly journals A ZVS Bidirectional Inverting Buck-Boost Converter Using Coupled Inductors

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 221 ◽  
Author(s):  
Xu-Feng Cheng ◽  
Yong Zhang ◽  
Chengliang Yin
Keyword(s):  
Storage System ◽  
Core Loss ◽  
Current Mode ◽  
Energy Storage System ◽  
Boost Converter ◽  
Experimental Results ◽  
Switching Loss ◽  
Zero Voltage Switching ◽  
Coupled Inductors ◽  
Light Load

The bidirectional inverting buck-boost converter (BIBBC) has a simple structure and a wide voltage ratio. It can be used in the battery supercapacitor hybrid energy storage system (BSHESS) and the motor drive system. However, the traditional continuous conduction mode (CCM) BIBBC will have severe switching loss. The triangular current mode (TCM) BIBBC can reduce the switching loss, but it will increase core loss and filter capacitance. To solve these problems, this paper proposes a new zero voltage switching (ZVS) BIBBC using a coupled inductor. This ZVS BIBBC will provide ZVS conditions for both transistors whether in positive operation or negative operation. Meanwhile, this ZVS BIBBC has small core losses and filter capacitance, and can be used simply. Finally, experimental results obtained from these BIBBC experimental prototypes are presented to validate the soft-switching achieving and the efficiency improvement performance. Experimental results show that both transistors of the ZVS BIBBC achieve ZVS turn-on conditions. The efficiency of the ZVS BIBBC increased by up to 10 percent compared to the traditional CCM BIBBC at heave load, and by up to 1.5 percent compared to the TCM BIBBC at a light load.

Extracellular and intracellular carbon dioxide concentration as a function of temperature in the toad Bufo marinus.

1994 ◽  
Vol 195 (1) ◽  
pp. 345-360 ◽  
Author(s):  
J N Stinner ◽  
D L Newlon ◽  
N Heisler
Keyword(s):  
Body Temperature ◽  
Extracellular Fluid ◽  
Carbon Dioxide Concentration ◽  
The Body ◽  
Whole Body ◽  
Mean Values ◽  
Temperature Changes ◽  
Fluid Compartment ◽  
Average Change ◽  
Higher Temperature

Previous studies of reptiles and amphibians have shown that changing the body temperature consistently produces transient changes in the respiratory exchange ratio (RE) and, hence, changes in whole-body CO2 stores, and that the extracellular fluid compartment contributes to the temperature-related changes in CO2 stores. The purpose of this study was to determine whether the intracellular fluid compartment contributes to the changes in CO2 stores in undisturbed resting cane toads. Increasing body temperature from 10 to 30 degrees C temporarily elevated RE, and returning body temperature to 10 degrees C temporarily lowered RE. The estimated average change in whole-body CO2 stores associated with the transient changes in RE was 1.0 +/- 0.8 mmol kg-1 (+/- S.D., N = 6). Plasma [CO2] and, thus, extracellular fluid [CO2], were unaffected by the temperature change. Plasma calcium levels were also unaffected, so that bone CO2 stores did not contribute to changes in whole-body CO2 stores. Intracellular [CO2] was determined for the lung, oesophagus, stomach, small intestine, liver, ventricle, red blood cells, skin and 14 skeletal muscles. [CO2] was significantly lower (P < 0.05) at higher temperature in 10 of these, and seven others, although not statistically significant (P > 0.05), had mean values at least 0.5 mmol kg-1 lower at the higher temperature. The average change in intracellular [CO2] for all tissues examined was -0.165 mmol kg-1 degrees C-1. We conclude that, in cane toads, the temperature-related transients in RE result from intracellular CO2 adjustments, that different tissues have unique intracellular CO2/temperature relationships, and that a combination of respiratory and ion-exchange mechanisms is used to adjust pH as temperature changes.

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness

2019 ◽  
Vol 963 ◽  
pp. 801-804
Author(s):  
Alexander Bolotnikov ◽  
Peter A. Losee ◽  
Reza Ghandi ◽  
Adam Halverson ◽  
Ljubisa Stevanovic
Keyword(s):  
Operating Temperature ◽  
Short Circuit ◽  
Source Region ◽  
Power Conversion ◽  
State Resistance

This work focuses on the ruggedness aspect of SiC MOSFET technology discussing design advances to maximize SiC device benefits for industrial and transportation power conversion applications. These improvements were studied as a tradeoff between short circuit withstand time (τsc) and device on-state resistance (RDS(on)) at operating temperature (150°C) utilizing 1.7kV MOSFETs fabricated on 2.25x4.5mm2 die. Up to two times improvement in τsc with only 20% of RDS(on) increase was achieved for design with reduced source region doping.

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