Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness

2019 ◽  
Vol 963 ◽  
pp. 801-804
Author(s):  
Alexander Bolotnikov ◽  
Peter A. Losee ◽  
Reza Ghandi ◽  
Adam Halverson ◽  
Ljubisa Stevanovic

This work focuses on the ruggedness aspect of SiC MOSFET technology discussing design advances to maximize SiC device benefits for industrial and transportation power conversion applications. These improvements were studied as a tradeoff between short circuit withstand time (τsc) and device on-state resistance (RDS(on)) at operating temperature (150°C) utilizing 1.7kV MOSFETs fabricated on 2.25x4.5mm2 die. Up to two times improvement in τsc with only 20% of RDS(on) increase was achieved for design with reduced source region doping.

2020 ◽  
Vol 1004 ◽  
pp. 933-938
Author(s):  
Vinoth Sundaramoorthy ◽  
Lukas Kranz ◽  
Stephan Wirths ◽  
Marco Bellini ◽  
Gianpaolo Romano ◽  
...  

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhenrong Jia ◽  
Shucheng Qin ◽  
Lei Meng ◽  
Qing Ma ◽  
Indunil Angunawela ◽  
...  

AbstractTandem organic solar cells are based on the device structure monolithically connecting two solar cells to broaden overall absorption spectrum and utilize the photon energy more efficiently. Herein, we demonstrate a simple strategy of inserting a double bond between the central core and end groups of the small molecule acceptor Y6 to extend its conjugation length and absorption range. As a result, a new narrow bandgap acceptor BTPV-4F was synthesized with an optical bandgap of 1.21 eV. The single-junction devices based on BTPV-4F as acceptor achieved a power conversion efficiency of over 13.4% with a high short-circuit current density of 28.9 mA cm−2. With adopting BTPV-4F as the rear cell acceptor material, the resulting tandem devices reached a high power conversion efficiency of over 16.4% with good photostability. The results indicate that BTPV-4F is an efficient infrared-absorbing narrow bandgap acceptor and has great potential to be applied into tandem organic solar cells.


2020 ◽  
Vol 1 (8) ◽  
pp. 2964-2970
Author(s):  
Venkatesan Srinivasan ◽  
Jagadeeswari Sivanadanam ◽  
Kothandaraman Ramanujam ◽  
Mariadoss Asha Jhonsi

The inclusion of CNMs together with TiO2 enhanced the short circuit current density by 31% and power conversion efficiency (PCE) by 46% compared to the CNM-free DSSCs.


2011 ◽  
Vol 679-680 ◽  
pp. 722-725 ◽  
Author(s):  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans Peter Nee

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.


1981 ◽  
Vol 59 (6) ◽  
pp. 727-732 ◽  
Author(s):  
Rafik O. Loutfy ◽  
Cheng-Kuo Hsiao

The effect of temperature on the photovoltaic properties of indium/metal-free phthalocyanine Schottky barrier solar cells was investigated in the range 260–350 K. In general, the short circuit photocurrent, Jsc, and fill factor, ff, increased with increasing temperature (in contrast to inorganic photocells). The device series resistance and open circuit photovoltage, Voc, decreased (similar to inorganic photocells) as temperature was raised. An increase in the overall power conversion efficiency, η, has been observed with increase of temperature. In the case of x-H2Pc, the power conversion efficiency increased by 2.5 times due to a temperature rise of 60 °C above ambient. Thus, for operation at temperatures above ambient, organic solar cells may offer a significant advantage over inorganic cells.Analysis of the variation of the photovoltage with temperature showed that the decrease in Voc is mainly due to variation injunction impedance, which is controlled by thermionic current at high temperature and ionized impurity at low temperature.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Md. Akhtaruzzaman ◽  
Ashraful Islam ◽  
Mohammad Rezaul Karim ◽  
A. K. Mahmud Hasan ◽  
Liyuan Han

Indoline dyeD-1was successfully applied as a cosensitizer for improving the spectral response of black dye in dye-sensitized solar cells (DSCs). It was observed thatD-1effectively increases the short-circuit photocurrent by offsetting the competitive light absorption byI/I3-electrolyte in the wavelength region 350–500 nm when adsorbed on the TiO2nanocrystaline films in a mix dye system. The DSCs containing theD-1and black dye achieved a power conversion efficiency of 9.80% with higher short-circuit photocurrent of 19.54 mA/cm2compared to the system of black dye without cosensitization under standard AM 1.5 sunlight.


Entropy ◽  
2020 ◽  
Vol 22 (8) ◽  
pp. 803 ◽  
Author(s):  
Armin Feldhoff

The basic principles of thermoelectrics rely on the coupling of entropy and electric charge. However, the long-standing dispute of energetics versus entropy has long paralysed the field. Herein, it is shown that treating entropy and electric charge in a symmetric manner enables a simple transport equation to be obtained and the power conversion and its efficiency to be deduced for a single thermoelectric material apart from a device. The material’s performance in both generator mode (thermo-electric) and entropy pump mode (electro-thermal) are discussed on a single voltage-electrical current curve, which is presented in a generalized manner by relating it to the electrically open-circuit voltage and the electrically closed-circuited electrical current. The electrical and thermal power in entropy pump mode are related to the maximum electrical power in generator mode, which depends on the material’s power factor. Particular working points on the material’s voltage-electrical current curve are deduced, namely, the electrical open circuit, electrical short circuit, maximum electrical power, maximum power conversion efficiency, and entropy conductivity inversion. Optimizing a thermoelectric material for different working points is discussed with respect to its figure-of-merit z T and power factor. The importance of the results to state-of-the-art and emerging materials is emphasized.


2020 ◽  
Vol 4 (9) ◽  
pp. 4754-4767 ◽  
Author(s):  
M. SasiKumar ◽  
Gurulakshmi Maddala ◽  
Meenakshamma Ambapuram ◽  
Mahesh Subburu ◽  
Jayathirtha Rao Vaidya ◽  
...  

Cost-effective, novel dopant-free hole transport material-assisted perovskite solar cells exhibit a champion short-circuit density 25.73 mA cm−2 and power conversion efficiency of 17.60%.


2020 ◽  
pp. 2150096
Author(s):  
Jing Gao ◽  
Chujian Liao ◽  
Yanqun Guo ◽  
Difan Zhou ◽  
Zhigang Zeng ◽  
...  

The perovskite membrane with large particle size, uniform coverage and high quality is the prerequisite for the preparation of efficient and stable perovskite solar cells. Various additives have been used to increase the grain size and improve the film morphology and crystal quality. In this paper, methylammonium chloride (MACl) was proposed to obtain high crystalline quality of [Formula: see text] perovskite absorption layer. The results show that the adding ammonium methyl chloride into the precursor of tricationic perovskite not only passivates surface defects to form high-quality and large-grain perovskite films, but also facilitates the formation of pure [Formula: see text]-phase [Formula: see text]. Meanwhile, the designed perovskite precursor solutions were used to fabricate mesoporous perovskite solar cells (PSCs). Owing to the perovskite layer consisting of optimized MACl doping, the short-circuit current density [Formula: see text] of PSCs reaches 23.81 mA/cm2, which is 2.73 mA/cm2 higher than the primary [Formula: see text] based on PSCs. The obtained power conversion efficiency (PCE) increases from 13.67% to 17.59%.


Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2859
Author(s):  
Eui Jin Lee ◽  
Ho Jun Song

This study synthesized a novel polymer, poly(alkylidene fluorene-alt-diphenylquinoxaline) (PAFDQ), based on a planar alkylidene-fluorene and a highly soluble quinoxaline derivative through the Suzuki coupling reaction. We designed a novel molecular structure based on alkylidene fluorene and quinoxaline derivatives due to compact packing property by the planar structure of alkyidene fluorene and efficient intra-molecular charge transfer by quinoxaline derivatives. The polymer was largely dissolved in organic solvents, with a number average molecular weight and polydispersity index of 13.2 kg/mol and 2.74, respectively. PAFDQ showed higher thermal stability compared with the general fluorene structure owing to its rigid alkylidene-fluorene structure. The highest occupied and lowest unoccupied molecular orbital levels of PAFDQ were −5.37 eV and −3.42 eV, respectively. According to X-ray diffraction measurements, PAFDQ exhibited the formation of an ordered lamellar structure and conventional edge-on π-stacking. The device based on PAFDQ/Y6-BO-4Cl showed the best performance in terms of short circuit current (9.86 mA/cm2), open-circuit voltage (0.76 V), fill factor (44.23%), and power conversion efficiency (3.32%). Moreover, in the PAFDQ/Y6-BO-4Cl-based film, the phase separation of donor-rich and acceptor-rich phases, and the connected dark domains, was observed.


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