scholarly journals Research on Low Ambient Short-circuit Test and X-Ray Inspection for Inner Damage of Single Encapsulation Dual Winding Reactor Models

Author(s):  
Haoyang Du ◽  
Ming Ao ◽  
Dongyun Shi ◽  
Chunming Zhao ◽  
Shijiu Wang ◽  
...  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.


2012 ◽  
Vol 48 (3) ◽  
pp. 1046-1053 ◽  
Author(s):  
Filippo Chimento ◽  
Willy Hermansson ◽  
Tomas Jonsson

2011 ◽  
Vol 679-680 ◽  
pp. 722-725 ◽  
Author(s):  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans Peter Nee

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.


2021 ◽  
Author(s):  
Frederic Maurer ◽  
Jonas Kristiansen Nøland

The sudden short-circuit is considered the gold-standard parameter measurement method for wound-field synchronous machines (WFSMs) as it enables the recording of the characteristic quantities in near-to-real conditions. However, the test needs huge pieces of equipment, but even worse, it reduces the lifetime of the electrical components by up to 10 years due to the high winding overhang mechanical forces. The DC-Decay tests are low-power alternatives to obtain the characteristic quantities without damaging the machinery. To allow wider use of this method, there are a couple of challenges left that are tackled by this paper. The two main open challenges are, firstly, the number of measurements needed to reach a particular precision, and secondly, a comparison of the DC-Decay with the sudden short-circuit test to allow the validation against the gold standard. More detailed, this paper explores the main challenges associated with the practical use of the DC decay method, which is a non-conventional and detailed-level approach to characterize WFSMs. We provide replies and recommendations regarding the number of measurements, suggesting the minimum number of recorded tests needed to obtain the equivalent diagram with a given accuracy, which has been further validated with an experimental case study. Moreover, the potential enhancement and precision of the parameter identification algorithm are studied in detail. Finally, the equivalent parameters of the DC decay method are compared to the gold standard, which concludes on what the characterization means in terms of predicting accurate transient short-circuit currents for WFSMs.


2021 ◽  
Author(s):  
Frederic Maurer ◽  
Jonas Kristiansen Nøland

The sudden short-circuit is considered the gold-standard parameter measurement method for wound-field synchronous machines (WFSMs) as it enables the recording of the characteristic quantities in near-to-real conditions. However, the test needs huge pieces of equipment, but even worse, it reduces the lifetime of the electrical components by up to 10 years due to the high winding overhang mechanical forces. The DC-Decay tests are low-power alternatives to obtain the characteristic quantities without damaging the machinery. To allow wider use of this method, there are a couple of challenges left that are tackled by this paper. The two main open challenges are, firstly, the number of measurements needed to reach a particular precision, and secondly, a comparison of the DC-Decay with the sudden short-circuit test to allow the validation against the gold standard. More detailed, this paper explores the main challenges associated with the practical use of the DC decay method, which is a non-conventional and detailed-level approach to characterize WFSMs. We provide replies and recommendations regarding the number of measurements, suggesting the minimum number of recorded tests needed to obtain the equivalent diagram with a given accuracy, which has been further validated with an experimental case study. Moreover, the potential enhancement and precision of the parameter identification algorithm are studied in detail. Finally, the equivalent parameters of the DC decay method are compared to the gold standard, which concludes on what the characterization means in terms of predicting accurate transient short-circuit currents for WFSMs.


1985 ◽  
Vol 74 (1) ◽  
pp. 137-152
Author(s):  
B.L. Gupta ◽  
J.A. Dow ◽  
T.A. Hall ◽  
W.R. Harvey

An alkaline hydrolysate of Bacillus thuringiensis var kurstaki HD1 (Btk) parasporal crystals was administered at 25 micrograms ml-1 (f.c.) to isolated, short-circuited, midguts of tobacco hornworm (Manduca sexta) larvae. The short-circuit current (s.c.c.), a precise measure of K+ active transport, was inhibited by 78% in 10 min in Btk-treated midguts as compared to controls. The elemental concentrations of K, together with Na, Mg, P, S, Cl and Ca, as well as the water content, were determined by electron probe X-ray microanalysis (EPXMA) in the muscle cells, columnar cells and goblet cells, as well as in the extracellular goblet cavity and the bathing media. The average K concentration in the goblet cell cavity was 129 mmol/kg wet wt in control midguts but only 37 mmol/kg wet wt in Btk-treated midguts. The elemental concentrations, including that of K, in other cell compartments were much less affected by Btk, but a rise in total cell calcium is suggested. It has been previously suggested that in vitro Btk acts specifically on limited regions of the apical membrane of the midgut epithelial cells. The simplest interpretation of the EPXMA results would be that initially Btk interacts specifically with the goblet cell apical membrane, which bounds the goblet cavity and contains the K+ pump responsible for the s.c.c. and high transepithelial potential difference (p.d.). Such interaction results in a rapid disruption of K+ transport across the goblet cell apical membrane, leading to dissipation of the K+ gradient and loss of p.d. The histopathological changes previously reported by other workers would then be a consequence of K+ pump inhibition causing changes in the intracellular pH, Ca2+ etc. Some possible molecular bases for these specific interactions between Btk and cell membrane are discussed.


Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6872
Author(s):  
Hailiang Liu ◽  
Jehoon Lee ◽  
Jungwon Kang

In this study, we investigated the characteristics of an organic-inorganic hybrid indirect-type X-ray detector with a CH3NH3PbI3 (MAPbI3) perovskite active layer. A layer with a thickness of 192 nm annealed at 100 °C showed higher absorption, higher crystallinity, and lower surface roughness than did perovskite layers made under different conditions. In the indirect X-ray detector, a scintillator coupled with the detector to convert X-ray photons to visible photons, and the converted photons were absorbed by the active layer to generate charge carriers. The detector with the optimized MAPbI3 (192 nm thick and 100 °C annealing condition) active layer was coupled with a CsI(Tl) scintillator which consisted of 400 μm thick CsI and 0.5 mm thick Al, and achieved the highest sensitivity, i.e., 2.84 mA/Gy·cm2. In addition, the highest short-circuit current density (JSC), i.e., 18.78 mA/cm2, and the highest mobility, i.e., 2.83 × 10−4 cm2/V·s, were obtained from the same detector without the CsI(Tl) scintillator.


2015 ◽  
Vol 08 (05) ◽  
pp. 1550052
Author(s):  
Xiaobo Chen

In this work, we present an investigation of the photovoltaic properties of low-temperature (700°C annealing temperature) prepared P -doped Silicon nanocrystals ( Si   NCs ) in silicon nitride by ammonia sputtering followed by rapid thermal annealing (RTA). We examined how the flow rate of NH3influenced the structural properties of the annealed films by using Raman scattering, grazing incidence X-ray diffraction (GI XRD) and transmission electron microscopy (TEM), it was found that the appropriate flow rate of NH3is 3 sccm. For the sample deposited at the flow rate of 3 sccm, TEM image showed that Si   NCs were formed with a mean size about 3.7 nm and the density of ~ 2.1 × 1012cm-2; X-ray photoelectron spectroscopy (XPS) characterization showed the existence of Si – P bonds, indicating effective P doping; the average absorptance of higher than 65% and a significant amount of photocurrent makes it suitable for photoactive. Moreover, the experimental P -doped Si   NCs : Si3N4/ p - Si heterojunction solar cell has been fabricated, and the device performance was studied. The photovoltaic device fabricated exhibits an open-circuit voltage (VOC) and a short-circuit current density (JSC) of 470 mV and 3.25 mA/cm2, respectively.


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