Development of RAF Quality 150mm 4H-SiC Wafer

2014 ◽  
Vol 778-780 ◽  
pp. 17-21 ◽  
Author(s):  
Hiroyuki Kondo ◽  
Hidetaka Takaba ◽  
Masanori Yamada ◽  
Yasushi Urakami ◽  
Takeshi Okamoto ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Quality Evaluation ◽  
Bulk Crystal ◽  
High Quality ◽  
Bulk Crystal Growth ◽  
Growth Method ◽  
Sic Wafer ◽  
Growth Technology

We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the seed obtained from the block crystal, high quality 150mm 4H-SiC wafer was achieved. This paper reports the results of the quality evaluation.

scholarly journals Bulk crystal growth and characterization of the bismuth ferrite-based material Bi3FeO4(MoO4)2

CrystEngComm ◽  
2019 ◽  
Vol 21 (15) ◽  
pp. 2508-2516 ◽  
Author(s):  
Conggang Li ◽  
Zeliang Gao ◽  
Xiangxin Tian ◽  
Junjie Zhang ◽  
Dianxing Ju ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Bismuth Ferrite ◽  
Bulk Crystal ◽  
High Quality ◽  
Bulk Crystal Growth ◽  
Polarized Raman

The large, high-quality Bi3FeO4(MoO4)2 single crystals of size up to 28 × 20 × 12 mm3 were grown successfully by the TSSG method. The thermal, optical, magnetization, and polarized Raman properties are investigated in detail.

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Solution Growth ◽  
High Quality ◽  
Preferential Growth ◽  
Bulk Crystal Growth ◽  
Seed Crystals ◽  
Growth Method ◽  
The Difference ◽  
Top Seeded Solution Growth

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]

2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Facet Formation
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