scholarly journals Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

2018 ◽  
Vol 924 ◽  
pp. 653-656 ◽  
Author(s):  
Katerina Tsagaraki ◽  
Maher Nafouti ◽  
Herve Peyre ◽  
Konstantinos Vamvoukakis ◽  
Nikolaos Makris ◽  
...  
Keyword(s):  
Cross Section ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Structure ◽  
Junction Field Effect Transistors

Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

2020 ◽  
Vol 67 (10) ◽  
pp. 3972-3977 ◽  
Author(s):  
Chen Yang ◽  
Houqiang Fu ◽  
Viswanathan Naveen Kumar ◽  
Kai Fu ◽  
Hanxiao Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Junction Field Effect Transistors

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology

2006 ◽  
Vol 53 (5) ◽  
pp. 3004-3012 ◽  
Author(s):  
G.-F. Dalla Betta ◽  
M. Boscardin ◽  
F. Fenotti ◽  
L. Pancheri ◽  
C. Piemonte ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Detector ◽  
Low Noise ◽  
Detector Technology ◽  
Junction Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document