Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

Download Full-text

SiC and GaN High-Voltage Power Devices

MRS Proceedings ◽

10.1557/proc-622-t1.1.1 ◽

2000 ◽

Vol 622 ◽

Cited By ~ 11

Author(s):

T.P. Chow

Keyword(s):

High Voltage ◽

Wide Bandgap ◽

Power Devices ◽

Experimental Performance ◽

Material Parameters ◽

Device Development ◽

Device Structures ◽

Similarities And Differences ◽

Bandgap Semiconductors ◽

Ionization Coefficients

ABSTRACTThe present status of development of SiC and GaN devices for high-voltage power electronics applications is reviewed. Device structures that are particularly applicable to these two wide bandgap semiconductors are considered and compared to those commonly used in silicon. The simulated and experimental performance of two-terminal rectifiers and three- terminal transistors and thyristors are compared. The effects of material parameters (mobility, ionization coefficients, lifetimes) and defects on device characteristics are pointed out. Similarities and differences between electronic and photonic device development in these semiconductors are discussed.

Download Full-text

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.46 ◽

2011 ◽

Vol 324 ◽

pp. 46-51 ◽

Cited By ~ 3

Author(s):

Dominique Tournier ◽

Pierre Brosselard ◽

Christophe Raynaud ◽

Mihai Lazar ◽

Herve Morel ◽

...

Keyword(s):

High Temperature ◽

High Voltage ◽

High Power ◽

Schottky Diodes ◽

Wide Bandgap ◽

Power Devices ◽

Wide Bandgap Materials ◽

Bandgap Semiconductors ◽

Bandgap Materials ◽

Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

Download Full-text