SiC and GaN High-Voltage Power Devices

2000 ◽  
Vol 622 ◽  
Author(s):  
T.P. Chow
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Devices ◽  
Experimental Performance ◽  
Material Parameters ◽  
Device Development ◽  
Device Structures ◽  
Similarities And Differences ◽  
Bandgap Semiconductors ◽  
Ionization Coefficients

ABSTRACTThe present status of development of SiC and GaN devices for high-voltage power electronics applications is reviewed. Device structures that are particularly applicable to these two wide bandgap semiconductors are considered and compared to those commonly used in silicon. The simulated and experimental performance of two-terminal rectifiers and three- terminal transistors and thyristors are compared. The effects of material parameters (mobility, ionization coefficients, lifetimes) and defects on device characteristics are pointed out. Similarities and differences between electronic and photonic device development in these semiconductors are discussed.

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

2019 ◽  
Vol 963 ◽  
pp. 189-193 ◽  
Author(s):  
Alexander Savtchouk ◽  
Marshall Wilson ◽  
Carlos Almeida ◽  
Dmitriy Marinskiy ◽  
Robert Hillard ◽  
...  
Keyword(s):  
Direct Method ◽  
Wide Bandgap ◽  
Power Devices ◽  
Electrical Parameters ◽  
Interface Characterization ◽  
Surface And Interface ◽  
Self Consistent ◽  
Flatband Voltage ◽  
Bandgap Semiconductors ◽  
Consistent Measurement

The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCV)

2020 ◽  
Vol 1004 ◽  
pp. 237-242
Author(s):  
Alexandre Savtchouk ◽  
Marshall Wilson ◽  
John D’Amico ◽  
Carlos Almeida ◽  
Jacek Lagowski
Keyword(s):  
Dopant Concentration ◽  
Depth Profiling ◽  
Extreme Case ◽  
Cost Effective ◽  
Wide Bandgap ◽  
Fully Depleted ◽  
Device Development ◽  
Bandgap Semiconductors

We report significant advancements in corona-based non-contact capacitance-voltage (CnCV) metrology recently developed for comprehensive C-V characterization of SiC and other wide bandgap semiconductors. The technique answers the industries needs for nondestructive, cost-effective C-V dopant monitoring for material and device development and manufacturing control. Excellent precision and matching to mercury probe CV is demonstrated for SiC, Ga2O3, GaN and AlGaN/GaN structures over a concentration range from 1014cm-3 to 2x1019cm-3. The emphasis in the present work is on improvement of CnCV in dopant depth profiling resolution and measurement throughout. This is achieved with a variable charge method that in-situ adjusts corona charging increments in response to changes in dopant concentration. Results are presented for multi-layer epitaxial SiC and for 2DEG in AlGaN/GaN HEMT structures. The latter represents an extreme case of high-low concentration profiling with a transition from 1020electrons/cm-3 in the 2D electron gas to a fully depleted well and dopant concentration in the 1015cm-3 range.

scholarly journals Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

1999 ◽  
Vol 4 (S1) ◽  
pp. 834-839 ◽  
Author(s):  
H.P. Gillis ◽  
M.B. Christopher ◽  
K.P. Martin ◽  
D.A. Choutov
Keyword(s):  
High Resolution ◽  
Stoichiometric Composition ◽  
Dry Etching ◽  
Wide Bandgap ◽  
Low Energy ◽  
Energy Electron ◽  
Etching Technique ◽  
Device Structures ◽  
Low Energy Electron ◽  
Bandgap Semiconductors

Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the III-N materials.

Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

MRS Advances ◽  
2019 ◽  
Vol 4 (44-45) ◽  
pp. 2377-2382
Author(s):  
J Pan ◽  
S. Afroz ◽  
N. Crain ◽  
W. Henning ◽  
J. Oliver ◽  
...  
Keyword(s):  
Power Electronics ◽  
Schottky Diode ◽  
High Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Doping Profile ◽  
Power Devices ◽  
Oxide Interface ◽  
Interfacial Defects

AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

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