X-Rays at the SIAM Photon Source

In this note, we describe the upgrade effort to convert the SIAM Photon source into an Xray synchrotron radiation facility with photon energies up to some 15 keV. This conversion of SIAM Photon into a third generation light source can be achieved through an increase of the electron beam energy and the addition of recently available superconducting wavelength shifter and multipole wiggler magnets. A gradual retrofit of vacuum chambers aiming at a reduction of electron beam instabilities as well as a modification of the focusing structure are expected to greatly increase the brightness of the photon beam. These upgrades will be implemented gradually over a few years to minimize the interruption of ongoing experimental activities. As an ultimate upgrade, a study has been started which shows the feasibility to implement a 2 GeV storage ring replacing the present ring in the same foot print. This new ring is configured to provide double the number of insertion device photon beam lines.

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A Universal Equation for the Emission Range of X Rays from Bulk Specimens

Microscopy and Microanalysis ◽

10.1017/s143192760707081x ◽

2007 ◽

Vol 13 (5) ◽

pp. 354-357 ◽

Cited By ~ 7

Author(s):

Raynald Gauvin

Keyword(s):

Electron Beam ◽

Free Path ◽

Beam Energy ◽

Mean Free Path ◽

Electron Beam Energy ◽

X Rays ◽

Bulk Materials ◽

Universal Equation ◽

Electron Trajectories ◽

X Ray

The derivation of a universal equation to compute the range of emitted X rays is presented for homogeneous bulk materials. This equation is based on two fundamental assumptions: the φ(ρz) curve of X-ray generation is constant and the ratio of the emitted to the generated X-ray range is equal to the ratio of the emitted to the generated X-ray intensity. An excellent agreement is observed with data obtained from Monte Carlo simulations of 200,000 electron trajectories in C, Al, Cu, Ag, Au, and an Fe–B alloy with boron weight fractions equal to 0.01, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 0.99, performed with the electron beam energy varied from 1 to 30 keV in 1-keV steps. When the ratio of the generated X-ray range to the photon mean free path is much smaller than one, the emission X-ray range is equal to the generated X-ray range, but when this ratio is much greater than one, the emission X-ray range is constant and is given by the product of the effective photon mean free path multiplied by the sine of the take-off angle.

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ELECTRON BEAM ENERGY BRANCHING IN OXYGEN

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19797375 ◽

1979 ◽

Vol 40 (C7) ◽

pp. C7-777-C7-778

Author(s):

G. Fournier ◽

J. Bonnet ◽

J. Bridet ◽

J. Fort ◽

D. Pigache

Keyword(s):

Electron Beam ◽

Beam Energy ◽

Electron Beam Energy

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Control of electron beam energy-spread by beam loading effects in a laser-plasma accelerator

Plasma Physics and Controlled Fusion ◽

10.1088/1361-6587/ab7c50 ◽

2020 ◽

Vol 62 (5) ◽

pp. 055004 ◽

Cited By ~ 1

Author(s):

Guangyu Li ◽

Quratul Ain ◽

Song Li ◽

Muhammad Saeed ◽

Daniel Papp ◽

...

Keyword(s):

Electron Beam ◽

Laser Plasma ◽

Beam Energy ◽

Plasma Accelerator ◽

Energy Spread ◽

Electron Beam Energy ◽

Beam Loading ◽

Loading Effects ◽

Laser Plasma Accelerator

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Soft-X-ray spectra of highly charged Au ions in an electron-beam ion trap

Canadian Journal of Physics ◽

10.1139/p00-104 ◽

2001 ◽

Vol 79 (2-3) ◽

pp. 153-162 ◽

Cited By ~ 26

Author(s):

E Träbert ◽

P Beiersdorfer ◽

K B Fournier ◽

S B Utter ◽

K L Wong

Keyword(s):

Electron Beam ◽

Beam Energy ◽

Large Scale ◽

Ion Trap ◽

Electron Beam Energy ◽

X Ray ◽

Maximum Charge ◽

Electron Beam Ion Trap ◽

Atomic Structure Calculations ◽

Structure Calculations

Systematic variation of the electron-beam energy in an electron-beam ion trap has been employed to produce soft-X-ray spectra (20 to 60 Å) of Au with well-defined maximum charge states ranging from Br- to Co-like ions. Guided by large-scale relativistic atomic structure calculations, the strongest Δn = 0 (n = 4 to n' = 4) transitions in Rb- to Cu-like ions (Au42+ Au50+) have been identified. PACS Nos.: 32.30Rj, 39.30+w, 31.50+w, 32.20R

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Electron-beam energy reconstruction for neutrino oscillation measurements

Nature ◽

10.1038/s41586-021-04046-5 ◽

2021 ◽

Vol 599 (7886) ◽

pp. 565-570

Author(s):

M. Khachatryan ◽

A. Papadopoulou ◽

A. Ashkenazi ◽

F. Hauenstein ◽

A. Nambrath ◽

...

Keyword(s):

Electron Beam ◽

Neutrino Oscillation ◽

Beam Energy ◽

Electron Beam Energy ◽

Energy Reconstruction

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The influence of electron beam energy on defect density in MOS device quality oxides

Vacuum ◽

10.1016/0042-207x(88)90571-4 ◽

1988 ◽

Vol 38 (11) ◽

pp. 1041-1043 ◽

Cited By ~ 1

Author(s):

A Balasiński ◽

A Jakubowski ◽

A Świt

Keyword(s):

Electron Beam ◽

Beam Energy ◽

Defect Density ◽

Electron Beam Energy ◽

Mos Device

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Arsenic Implant Activation and Redistribution in P-Type Silicon Induced by Pulsed Electron Beam Annealing

MRS Proceedings ◽

10.1557/proc-13-419 ◽

1982 ◽

Vol 13 ◽

Author(s):

D. Barbierf ◽

M. Baghdadi ◽

A. Laugier ◽

A. Cachard

Keyword(s):

Electron Beam ◽

Carrier Concentration ◽

Beam Energy ◽

Energy Deposition ◽

Liquid Silicon ◽

Electron Beam Energy ◽

Pulsed Electron Beam ◽

Highly Active ◽

P Type ◽

Fluence Range

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.

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