Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures

2007 ◽  
Vol 131-133 ◽  
pp. 65-70 ◽  
Author(s):  
M. Baran ◽  
N. Korsunska ◽  
L. Khomenkova ◽  
T. Stara ◽  
V. Khomenkov ◽  
...  

The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

Author(s):  
А.А. Семакова ◽  
С.Н. Липницкая ◽  
К.Д. Мынбаев ◽  
Н.Л. Баженов ◽  
С.С. Кижаев ◽  
...  

Spectral characteristics of InAs-based light-emitting diode (LED) heterostructures for the mid-infrared spectral range were studied both experimentally and theoretically, with the use of MATLAB software, and also modeled in COMSOL Multiphysics®. By comparing the results of experiments, calculations and modeling, a pattern of the formation of emission spectra of heterostructures was obtained. The obtained results confirm the prospects for the use of modeling in the design of LED structures.


JETP Letters ◽  
2020 ◽  
Vol 112 (1) ◽  
pp. 31-36
Author(s):  
V. I. Kukushkin ◽  
V. E. Kirpichev ◽  
E. N. Morozova ◽  
V. V. Solov’ev ◽  
Ya. V. Fedotova ◽  
...  

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