Structure and Optical Properties of Ca Silicide Films and Si/Ca3Si4/Si(111) Heterostructures

2014 ◽  
Vol 213 ◽  
pp. 71-79 ◽  
Author(s):  
Nikolay Gennadievich Galkin ◽  
Dmitrii Aleksandrovich Bezbabnyi ◽  
Sergei Andreevich Dotsenko ◽  
Konstantin Nikolaevich Galkin ◽  
Igor Mikhailovich Chernev ◽  
...  

Thick, thin films and island of Ca silicide have been grown by Ca deposition onto 500 °C Si (111)7x7 substrates. The crystal structure of the grown layers strongly differs from the known Ca silicides (Ca2Si, CaSi, Ca5Si3, Ca14Si19, CaSi2). The phonon peaks at 389 and 416 cm-1 and the interband transition peaks (0.9-1.0, 1.3-1.7 and 2.0-2.5 eV) belongs to another silicide - Ca3Si4. Peculiarities of crystal, electronic, and phonon structure and optical properties of the grown Ca silicide films were measured by in situ and ex situ methods permit to state that the formed Ca silicide film has a composition Ca3Si4. Heterostructures with embedded Ca3Si4 films with different thicknesses have been formed atop the Ca3Si4 films by MBE and SPE at 500 °C. The observed density of pinholes with different sizes suggests the Si growth atop the Ca silicide follows a 3D mechanism. Photoluminescence was found first time in Si/Ca3Si4/Si (111) heterostructures.

RSC Advances ◽  
2017 ◽  
Vol 7 (66) ◽  
pp. 41603-41609 ◽  
Author(s):  
F. Kemper ◽  
E. Beckert ◽  
R. Eberhardt ◽  
A. Tünnermann

In this contributionin situemission filter generation for,e.g.fluorescence light detection by morphology tailoring of silver nanoparticles within a polymer layer, is presented for the first time.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


2018 ◽  
Vol 45 (1-3) ◽  
pp. 14-21 ◽  
Author(s):  
Irzaman ◽  
A. Nuraisah ◽  
Aminullah ◽  
K. A. Hamam ◽  
H. Alatas

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.


Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Chad Kamler ◽  
Martin Diaz ◽  
Shuchi Sharma ◽  
...  
Keyword(s):  
Ex Situ ◽  

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