Влияние образования силицидов на удельное сопротивление кремния

The effect of the formation of thin films of nickel silicides on the migration of intrinsic p -type impurities in silicon was studied for the first time. It was found that bulk resistance $${{\rho }_{{v}}}$$ of a single Si crystal increases by a factor of 3–4 if a NiSi_2 film with thickness θ ≥ 50–100 Å forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 Å.

Enhancement of thermoelectric power factor by Si:B addition to higher manganese silicide film

Higher manganese silicide film ( HMS , MnSi x, x = 1.73–1.75) with addition of Si : B has been prepared on quartz substrate ( SiO 2) by magnetron sputtering of MnSi 2 and Si : B (1 at.% B content) targets. It is found that the Si : B -added HMS film has a much lower electrical resistivity (R) but maintains its high Seebeck coefficient (S). As a result, the thermoelectric power factor, PF = S2/R, is greatly enhanced. It is also found that the metal In together with Ag -paste can be used as ohmic contact materials for measuring the electrical properties of the HMS film. The thermoelectric power factor can reach 1255 μW/m-K2 at 733 K for the Si : B -added HMS film, which is about two times higher than that of the pure HMS film.