Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon
2015 ◽
Vol 242
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pp. 163-168
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Keyword(s):
The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.
2013 ◽
Vol 205-206
◽
pp. 260-264
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2008 ◽
Vol 19
(S1)
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pp. 281-284
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Keyword(s):
2000 ◽
Vol 5
(S1)
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pp. 922-928
1995 ◽
Vol 09
(23)
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pp. 3099-3114
2006 ◽
Vol 429
(4-6)
◽
pp. 617-621
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Keyword(s):
2012 ◽
Vol 9
(10-11)
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pp. 1992-1995
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Keyword(s):
2008 ◽
Vol 600-603
◽
pp. 1297-1300
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