The Research for Approaches to Increase Power of the Compact THz Emitters Based on Low-Temperature Gallium Arsenide Heterostructures

2020 ◽  
Vol 310 ◽  
pp. 101-108
Author(s):  
Sergey Nomoev ◽  
Ivan Vasilevskii ◽  
Alexander Vinichenko

The design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 °C, 230 °C, 240 °C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.

Author(s):  
С.А. Номоев ◽  
И.С. Васильевский ◽  
А.Н. Виниченко ◽  
К.И. Козловский ◽  
А.А. Чистяков ◽  
...  

AbstractLow-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.


2021 ◽  
Vol 533 (8) ◽  
pp. 2170025
Author(s):  
Arseniy M. Buryakov ◽  
Maxim S. Ivanov ◽  
Dinar I. Khusyainov ◽  
Anastasia V. Gorbatova ◽  
Vladislav R. Bilyk ◽  
...  

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.


1995 ◽  
Vol 24 (7) ◽  
pp. 913-916 ◽  
Author(s):  
K. -M. Lipka ◽  
B. Splingart ◽  
D. Theron ◽  
J. K. Luo ◽  
G. Salmer ◽  
...  

2006 ◽  
Vol 286 (1) ◽  
pp. 197-204 ◽  
Author(s):  
D.A. Murdick ◽  
X.W. Zhou ◽  
H.N.G. Wadley

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