Low-temperature grown Gallium Arsenide (LT-GaAs) high-speed detectors

2016 ◽  
pp. 121-155 ◽  
Author(s):  
Marc Currie
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
High Speed ◽  
Lt Gaas

The Research for Approaches to Increase Power of the Compact THz Emitters Based on Low-Temperature Gallium Arsenide Heterostructures

2020 ◽  
Vol 310 ◽  
pp. 101-108
Author(s):  
Sergey Nomoev ◽  
Ivan Vasilevskii ◽  
Alexander Vinichenko
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Drift Diffusion ◽  
Photoconductive Antennas ◽  
Poisson Equations ◽  
Full Wave ◽  
Second Period ◽  
Optical Behavior ◽  
Thz Antenna ◽  
Lt Gaas

The design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 °C, 230 °C, 240 °C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.

Low-temperature f.e.t. for low-power high-speed logic

1977 ◽  
Vol 13 (6) ◽  
pp. 156 ◽  
Author(s):  
H. Rees ◽  
G.S. Sanghera ◽  
R.A. Warriner
Keyword(s):  
Low Temperature ◽  
Low Power ◽  
High Speed

scholarly journals Research on Performance Test System of Space Harmonic Reducer in High Vacuum and Low Temperature Environment

Machines ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 1
Author(s):  
Jing Wang ◽  
Zhihua Wan ◽  
Zhurong Dong ◽  
Zhengguo Li
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
Performance Test ◽  
High Reliability ◽  
High Vacuum ◽  
Test System ◽  
Low Noise ◽  
Speed Ratio ◽  
Space Harmonic ◽  
Temperature Environment

The harmonic reducer, with its advantages of high precision, low noise, light weight, and high speed ratio, has been widely used in aerospace solar wing deployment mechanisms, antenna pointing mechanisms, robot joints, and other precision transmission fields. Accurately predicting the performance of the harmonic reducer under various application conditions is of great significance to the high reliability and long life of the harmonic reducer. In this paper, a set of automatic harmonic reducer performance test systems is designed. By using the CANOpen bus interface to control the servo motor as the drive motor, through accurately controlling the motor speed and rotation angle, collecting the angle, torque, and current in real time, the life cycle test of space harmonic reducer was carried out in high vacuum and low temperature environment on the ground. Then, the collected data were automatically analyzed and calculated. The test data of the transmission accuracy, backlash, and transmission efficiency of the space harmonic reducer were obtained. It is proven by experiments that the performance data of the harmonic reducer in space work can be more accurately obtained by using the test system mentioned in this paper, which is convenient for further research on related lubricating materials.

Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gaas Layer ◽  
Gate Insulator ◽  
Gate Bias ◽  
Channel Current ◽  
Turn On ◽  
Dc Characteristics ◽  
Low Temperature Gaas ◽  
Channel Separation ◽  
Lt Gaas

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

LT-GaAs with high breakdown strength at low temperature for power MISFET applications

1995 ◽  
Vol 24 (7) ◽  
pp. 913-916 ◽  
Author(s):  
K. -M. Lipka ◽  
B. Splingart ◽  
D. Theron ◽  
J. K. Luo ◽  
G. Salmer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Breakdown Strength ◽  
Lt Gaas

An Experimental Investigation of the Auto-Ignition Properties of Two C5 Esters: Methyl Butanoate and Butyl Methanoate

2007 ◽  
Author(s):  
Stephen M. Walton ◽  
Carlos Perez ◽  
Margaret S. Wooldridge
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
Combustion Engine ◽  
Low Temperature Combustion ◽  
Moderate Pressure ◽  
Molecular Weights ◽  
Auto Ignition ◽  
Methyl Butanoate ◽  
Temperature Combustion ◽  
Time Histories

Ignition studies of two small esters were performed using a rapid compression facility (RCF). The esters (methyl butanoate and butyl methanoate) were chosen to have matching molecular weights, and C:H:O ratios, while varying the lengths of the constituent alkyl chains. The effect of functional group size on ignition delay time was investigated using pressure time-histories and high speed digital imaging. The mixtures studied covered a range of conditions relevant to oxygenated fuels and fuel additives, including bio-derived fuels. Low temperature and moderate pressure conditions were selected for study due to their relevance to advanced low temperature combustion strategies, and internal combustion engine conditions. The results are discussed in terms of the reaction pathways affecting the ignition properties.

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