Stabilized Nanostructure Composites for Nonvolatile Memory Device Applications

2012 ◽  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Device Applications

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

2007 ◽  
Vol 101 (2) ◽  
pp. 026109 ◽  
Author(s):  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Chan Bin Mo ◽  
Soon Hyung Hong ◽  
Pan Kwi Park ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Modulation Effect ◽  
Nonvolatile Memory Device ◽  
Device Applications

Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

2005 ◽  
Vol 86 (10) ◽  
pp. 103505 ◽  
Author(s):  
Jong Jin Lee ◽  
Yoshinao Harada ◽  
Jung Woo Pyun ◽  
Dim-Lee Kwong
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
Nanocrystal Formation

Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1692-1695 ◽  
Author(s):  
Chien-Wei Liu ◽  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Jin-Tsong Jeng ◽  
Bau-Tong Dai ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Device Applications

scholarly journals HfO2/HfAlO/HfO2Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications

2007 ◽  
Vol 46 (4A) ◽  
pp. 1803-1807 ◽  
Author(s):  
Siddheswar Maikap ◽  
Pei-Jer Tzeng ◽  
Ting-Yu Wang ◽  
Heng-Yuan Lee ◽  
Cha-Hsin Lin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Charge Trapping ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Device Applications

Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications

2007 ◽  
Vol 91 (4) ◽  
pp. 042107 ◽  
Author(s):  
Chien-Wei Liu ◽  
Chin-Lung Cheng ◽  
Sung-Wei Huang ◽  
Jin-Tsong Jeng ◽  
Shiuan-Hua Shiau ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Nanoparticles ◽  
Nonvolatile Memory Device ◽  
Device Applications

Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Schottky Diode ◽  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
A Current

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.

Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications

2005 ◽  
Vol 86 (12) ◽  
pp. 123110 ◽  
Author(s):  
Sangmoo Choi ◽  
Seok-Soon Kim ◽  
Man Chang ◽  
Hyunsang Hwang ◽  
Sanghun Jeon ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Thermally Stable ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
Trapping Sites
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