Investigation of Thick Film Technology for High Temperature Applications
2012 ◽
Vol 2012
(HITEC)
◽
pp. 000184-000191
◽
Keyword(s):
Dc Bias
◽
For electronics operating at 300°C, thick film technology has been proposed as a suitable interconnection technology to create modules. This work examines the leakage current with constant bias (100V) at 300°C. The leakage current increased significantly within the first few hours of aging. The effect of 300°C aging with dc bias on the adhesion of multilayer thick film test structures was also studied. The aged adhesion was a function of bias polarity. Fracture surface analysis results are presented. Bi in the PtPdAu conductor appears to play a role in both the leakage current and adhesion phenomena observed.
Keyword(s):
Keyword(s):
2006 ◽
Vol 430
(1-2)
◽
pp. 1-8
◽
1990 ◽
Vol 15
(7)
◽
pp. 427-432
◽
2011 ◽
Vol 314-316
◽
pp. 1210-1213
Keyword(s):