scholarly journals Cobalt and Molybdate Ions Effects on the Passivation of Iron Based FeCoC Ternary Alloys, in non Deaerated Solution of 10-3 M NaHCO3 + 10-3 M Na2SO4, at 25 °C

2007 ◽  
Vol 26 (2) ◽  
pp. 181-198 ◽  
Author(s):  
F Haddad ◽  
A Benchettara ◽  
S E Amara ◽  
R Kesri
Keyword(s):  
Ternary Alloys ◽  
Deaerated Solution ◽  
Iron Based

scholarly journals Contribution to the Study of the Relation between Microstructure and Electrochemical Behavior of Iron-Based FeCoC Ternary Alloys

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Farida Benhalla-Haddad ◽  
Sif Eddine Amara ◽  
Abdelkader Benchettara ◽  
Kamel Taibi ◽  
Rafika Kesri
Keyword(s):  
Electrochemical Behavior ◽  
Ternary Alloys ◽  
Iron Based

Monte Carlo simulation of phase separation in iron-based ternary alloys

2003 ◽  
Vol 11 (11-12) ◽  
pp. 1267-1272 ◽  
Author(s):  
K. Goto ◽  
Y. Saito ◽  
Y. Suwa
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Phase Separation ◽  
Ternary Alloys ◽  
Iron Based

Modelling of Phase Separation Dynamics in Iron-Based Ternary Alloys

2003 ◽  
Vol 426-432 ◽  
pp. 3867-3872
Author(s):  
E. Fukuhara ◽  
M. Onuma ◽  
Y. Suwa ◽  
Yoshiyuki Saito
Keyword(s):  
Phase Separation ◽  
Ternary Alloys ◽  
Iron Based

Cross Interdiffusion Coefficients in Nickel- and Iron-Based Ternary Alloys

2008 ◽  
pp. 419-424
Author(s):  
Yoshinori Murata ◽  
Shingo Sakurai ◽  
Efendi Mabruri ◽  
Toshiyuki Koyama ◽  
Masahiko Morinaga
Keyword(s):  
Ternary Alloys ◽  
Iron Based ◽  
Interdiffusion Coefficients

scholarly journals Changes of electron density and defects distribution in binary and ternary iron alloys studied by positron annihilation

2017 ◽  
Vol 53 (3) ◽  
pp. 399-405
Author(s):  
A. Udovsky ◽  
V. Grafutin ◽  
V. Kolotushkin ◽  
V. Miloserdin ◽  
I. Evstukhina ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Electron Density ◽  
Binary Alloys ◽  
Iron Alloys ◽  
Ternary Alloys ◽  
Iron Based ◽  
And Tungsten

Properties of binary and ternary iron based alloys doped by different additions were investigated. It was shown for binary alloys containing chromium, molybdenum and tungsten were that results of doping by 0.8% molybdenum and tungsten are similar to those for the sample doped by 9%chromium. Ternary alloys containing chromium and less amounts of molybdenum, tungsten and vanadium were investigated as well. Two types of defects were observed: divacancies and cluster-like defects. It was shown that the electron density in ternary alloys is similar to that in binary alloys containing 0.8% molybdenum.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

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