scholarly journals Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process

2015 ◽  
Vol 16 (1) ◽  
pp. 46-48 ◽  
Author(s):  
Sang Yeol Lee ◽  
Taehyun Kang ◽  
Sang Min Han ◽  
Young Seon Lee ◽  
Jun Young Choi
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistor ◽  
Solution Process

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

2015 ◽  
Vol 1731 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Koji Abe ◽  
Hirobumi Ushijima
Keyword(s):  
Thin Film ◽  
Organic Solvents ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Precursor Solution ◽  
Drying Process ◽  
Minor Variation ◽  
Drying Temperature ◽  
Metal Nitrates

ABSTRACTWe have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by mixing of metal nitrates and two kinds of organic solvents, 2-methoxyethanol (2ME) and 2,2,2-trifluoroethanol (TFE). 2ME was used for dissolving metal nitrates. TFE was added as a solvent for reducing surface tension as small as possible, leading to improvement of the wettability of the precursor solution on the surface of the substrate. In order to discuss the relationship between morphology and drying process, the spin-coated IGZO-precursor films were dried at room temperature and 140 °C on a hotplate, respectively. Annealing of the both films was carried out at 300 °C in an electric oven for 60 min after each drying process. Drying at room temperature provides a discontinuous film, resulting in a large variation of the TFT performance. On the other hand, drying at 140 °C provides a continuous film, resulting in the higher TFT performance and a minor variation. The difference in surface morphologies would be derived from the evaporation rate of the organic solvents. The rapid evaporation at 140 °C brings about rapid pinning of the spin-coated precursor layer on the substrate. Preparation process via the drying at 140 °C gave ∼ 1 cm2 V-1 s-1 of the saturated mobility, quite small hysteresis, and 107∼ 108 of the on-off ratio.

Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

2015 ◽  
Vol 212 (10) ◽  
pp. 2133-2140 ◽  
Author(s):  
Satoshi Inoue ◽  
Tue Trong Phan ◽  
Tomoko Hori ◽  
Hiroaki Koyama ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Thin Film

scholarly journals Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor

2014 ◽  
Vol 9 (1) ◽  
pp. 392 ◽  
Author(s):  
Ya-Chi Cheng ◽  
Hung-Bin Chen ◽  
Ming-Hung Han ◽  
Nan-Heng Lu ◽  
Jun-Ji Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistor

Temperature stress on a thin film transistor with a novel BaZnSnO semiconductor using a solution process

RSC Advances ◽  
2015 ◽  
Vol 5 (13) ◽  
pp. 9621-9626 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang ◽  
Wen-Qing Zhu ◽  
Xue-Yin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Stress ◽  
Thin Film Transistor ◽  
Solution Process

This work reports the temperature stress on a thin film transistor based on a novel BaZnSnO semiconductor using a solution process.

scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process

2014 ◽  
Vol 3 (9) ◽  
pp. Q44-Q46 ◽  
Author(s):  
M.-J. Park ◽  
J.-Y. Bak ◽  
J.-S. Choi ◽  
S.-M. Yoon
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Active Channel
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