scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

scholarly journals Process Design Kit and Design Automation for Flexible Hybrid Electronics

2019 ◽  
Vol 16 (3) ◽  
pp. 117-123
Author(s):  
Tsung-Ching Huang ◽  
Ting Lei ◽  
Leilai Shao ◽  
Sridhar Sivapurapu ◽  
Madhavan Swaminathan ◽  
...  
Keyword(s):  
Process Design ◽  
Design Automation ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Semiconductor ◽  
Wearable Electronics ◽  
Wide Range

Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexible substrates for a wide range of applications, from flexible displays to wearable medical devices. Here, we report (1) a process design kit (PDK) to enable FHE design automation for large-scale FHE circuits and (2) solution process-proven intellectual property blocks for TFT circuits design, including Pseudo-Complementary Metal-Oxide-Semiconductor (Pseudo-CMOS) flexible digital logic and analog amplifiers. The FHE-PDK is fully compatible with popular silicon design tools for design and simulation of hybrid-integrated flexible circuits.

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor

2012 ◽  
Vol 20 (4) ◽  
pp. 175 ◽  
Author(s):  
Linfeng Lan ◽  
Nana Xiong ◽  
Peng Xiao ◽  
Wen Shi ◽  
Miao Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Oxide Semiconductor

scholarly journals A-π-D-π-A-Based Small Molecules for OTFTs Containing Diketopyrrolopyrrole as Acceptor Units

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 817
Author(s):  
Baji Shaik ◽  
Mujeeb Khan ◽  
Mohammed Rafi Shaik ◽  
Mohammed A.F. Sharaf ◽  
Doumbia Sekou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Properties ◽  
Small Molecules ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Cast Films ◽  
Donor Acceptor ◽  
P Type

A-π-D-π-A-based small molecules 6,6′-((thiophene-2,5-diylbis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-T) and 6,6′-(((2,3-dihydrothieno[3,4-b][1,4]dioxine-5,7-diyl)bis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-EDOT) have been designed and synthesized. The diketopyrrolopyrrole acts as an electron acceptor, while the thiophene or 3,4-ethylenedioxythiophene acts as an electron donor. The donor–acceptor groups are connected by an ethynyl bridge to further enhance the conjugation. The optoelectronics, electrochemical, and thermal properties have been investigated. Organic thin film transistor (OTFT) devices prepared from TDPP-T and TDPP-EDOT have shown p-type mobility. In as cast films, TDPP-T and TDPP-EDOT have shown a hole mobility of 5.44 × 10−6 cm2 V−1 s−1 and 4.13 × 10−6 cm2 V−1 s−1, respectively. The increase in the mobility of TDPP-T and TDPP-EDOT OTFT devices was observed after annealing at 150 °C, after which the mobilities were 3.11 × 10−4 cm2 V−1 s−1 and 2.63 × 10−4 cm2 V−1 s−1, respectively.

High performance p-type NiOx thin-film transistor by Sn doping

2016 ◽  
Vol 108 (23) ◽  
pp. 233503 ◽  
Author(s):  
Tengda Lin ◽  
Xiuling Li ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Sn Doping ◽  
P Type

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

2014 ◽  
Vol 14 (5) ◽  
pp. 666-672 ◽  
Author(s):  
Myeonghun U ◽  
Young-Joon Han ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
P Type

Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

2015 ◽  
Vol 3 (1) ◽  
pp. 33-36 ◽  
Author(s):  
Chi-Min Chen ◽  
Sunil Sharma ◽  
Yi-Lun Li ◽  
Jey-Jau Lee ◽  
Show-An Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Temperature Dependent

A thienoisoindigo-based copolymer with thieno[3,2-b]thiophene as a donor shows a temperature-dependent orientation of its chains, and a hole mobility up to 0.69 cm2 V−1 s−1 has been achieved.

High-Performance, Ultrathin, Ultraflexible Organic Thin-Film Transistor Array Via Solution Process

Small ◽  
2018 ◽  
Vol 14 (33) ◽  
pp. 1801020 ◽  
Author(s):  
Hang Ren ◽  
Nan Cui ◽  
Qingxin Tang ◽  
Yanhong Tong ◽  
Xiaoli Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor
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