Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation

Oxide Semiconductor ◽

Interfacial Behavior ◽

Sulfur Passivation ◽

Carrier Transport Property ◽

Ingaas Quantum Well

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Design, Simulation and Construction of Field Effect Transistors ◽

10.5772/intechopen.74532 ◽

2018 ◽

Author(s):

Dian Lei ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

Applied Physics Express ◽

10.1143/apex.5.064002 ◽

2012 ◽

Vol 5 (6) ◽

pp. 064002 ◽

Cited By ~ 28

Author(s):

Jianqiang Lin ◽

Tae-Woo Kim ◽

Dimitri A. Antoniadis ◽

Jesús A. del Alamo

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Front End ◽

Effect Transistor ◽

Lift Off ◽

Ingaas Quantum Well

Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf02 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF02 ◽

Cited By ~ 1

Author(s):

Sumarlina Azzah Bte Suleiman ◽

Sungjoo Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Transport ◽

Oxide Semiconductor ◽

Transport Mechanisms ◽

Gate Leakage

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of Applied Physics ◽

10.1063/1.4939761 ◽

2016 ◽

Vol 119 (2) ◽

pp. 024502 ◽

Cited By ~ 24

Author(s):

Dian Lei ◽

Wei Wang ◽

Zheng Zhang ◽

Jisheng Pan ◽

Xiao Gong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Cited By ~ 24

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack

Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Length

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP Advances ◽

10.1063/1.5034041 ◽

2018 ◽

Vol 8 (7) ◽

pp. 075203

Author(s):

Hyeon-Bhin Jo ◽

Jung-Ho Park ◽

Seung-Woo Son ◽

Ji-Min Baek ◽

Do-Young Yun ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Investigation ◽

Gate Capacitance