Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
2015 ◽
Vol 36
(7)
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pp. 672-674
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1993 ◽
Vol 32
(Part 1, No. 10)
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pp. 4393-4397
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2015 ◽
Vol 36
(3)
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pp. 223-225
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Keyword(s):
2011 ◽
Vol 88
(6)
◽
pp. 872-876
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