Some Notes on Hydrogen Blistering ★—A Technical Note

CORROSION ◽  
1954 ◽  
Vol 10 (3) ◽  
pp. 101-102 ◽  
Keyword(s):  
Electric Furnace ◽  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Diffusion Rate ◽  
Technical Note ◽  
Acidic Solutions ◽  
Grade Steel

Abstract Data were obtained on the diffusion of atomic hydrogen through several kinds of steel in acidic solutions. Where diffusion occurred, the presence of sulfide increased the diffusion rate. In an electric furnace grade steel, diffusion did not take place unless sulfide was present. Observations were made on the permanene of the sulfide surface associated with rapid atomic hydrogen diffusion.

Role of atomic hydrogen diffusion in a hydrogen flame

2007 ◽  
Vol 43 (2) ◽  
pp. 125-131 ◽  
Author(s):  
V. A. Bunev ◽  
V. N. Panfilov ◽  
V. S. Babkin
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Hydrogen Flame

Measurement of atomic-hydrogen diffusion in helium

1988 ◽  
Vol 37 (3) ◽  
pp. 737-746 ◽  
Author(s):  
S. G. Redsun ◽  
R. J. Knize
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion

Effects in Silicon Explained by Atomic Hydrogen

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Schnegg ◽  
H. Prigge ◽  
M. Grundner ◽  
P. O. Hahn ◽  
H. Jacob
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Silicon Layer ◽  
Deuterium Content ◽  
Slight Reduction ◽  
Oh Groups ◽  
Acceptor Concentration ◽  
Type Silicon ◽  
Crystal Imperfections ◽  
P Type

ABSTRACTThe chemomechanical polishing mechanism is described as a corrosive attack of water forming Si-H and Si-OH groups. By adding ammonia or amines to the slurry we observe an irlfease of the resistivity corresponding to a neutralization of up to 1 × 1017 acceptor atoms cm−3 in the case of p-type silicon, whereas n-type silicon can show a slight reduction in resistivity due to the neutralization of the residual acceptor concentration.SIMS measurements show the presence of hydrogen in the bulk. Using deuterium instead of hydrogen, a correlation could be established between the deuterium content of the wafer, measured by the effusion technique, and the degree of the acceptor compensation.As can be shown by resistivity and C/V-measurements, under the conditions of polishing the supposed inactivator hydrogen migrates to a distance finally corresponding to the thickness of a wafer. This is contrary to the comm on method of plasma treatment, where a damaged silicon layer is supposed to act as a barrier to the hydrogen diffusion. Differences in the IR spectra can be explained this way.Crystal imperfections in the bulk and on the surface influences the migration of hydrogen essentially.

scholarly journals Isotope Dependence and Quantum Effects on Atomic Hydrogen Diffusion in Liquid Water

2015 ◽  
Vol 120 (8) ◽  
pp. 1771-1779 ◽  
Author(s):  
J. A. Walker ◽  
S. P. Mezyk ◽  
E. Roduner ◽  
D. M. Bartels
Keyword(s):  
Liquid Water ◽  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Quantum Effects

Hydrogen in the Plastic Deformed Steel

2007 ◽  
Vol 537-538 ◽  
pp. 33-40 ◽  
Author(s):  
Enikö Réka Fábián ◽  
László Dévényi
Keyword(s):  
Cold Rolling ◽  
Room Temperature ◽  
Hydrogen Diffusion ◽  
Hydrogen Permeation ◽  
Cold Work ◽  
Low Carbon ◽  
Steel Sheets ◽  
Metallic Inclusions ◽  
Dissolved Hydrogen ◽  
Grade Steel

The solubility of hydrogen in iron and steels are affected by temperature and crystal structure. At lower temperatures (below about 400°C), the excess hydrogen, beyond that which is soluble (and therefore dissolved) interstitially, is retained in the steel in other sites commonly referred to as ”traps”. At room temperature, the dissolved hydrogen may be only a small fraction of the total hydrogen content. The movement of hydrogen in steel occurs by the migration of atoms through the lattice. The hydrogen diffusion takes place with interstitial mechanism. Trapping enhances the solubility of hydrogen but decreases the diffusivity. In practice hydrogen transmissibility is characterized by TH value. We have studied the effect of the cold rolling on the TH value for Al-killed low carbon enamelling-grade steel sheets. The microstructures of the samples were formed from ferrite, carbides and some non-metallic inclusions. Reducing the thickness of the steel sheets by cold rolling in carbides appears ruptures, microcavities, and the dislocation density increases in ferrite grains. Cold work increases the hydrogen permeation time. The average of TH values after hot rolling was 0.6; after about 72 % thickness reductions by cold rolling the average TH values was 101.4.

Energetics of atomic hydrogen diffusion on Si(100)

1993 ◽  
Vol 289 (3) ◽  
pp. L625-L630 ◽  
Author(s):  
A. Vittadini ◽  
A. Selloni ◽  
M. Casarin
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion

Interaction of Atomic Hydrogen with the Surface of Cu-llII-V12 Chalcopyrite Semiconductors-A Method for Controlled Stoichiometry Variation

1998 ◽  
Vol 513 ◽  
Author(s):  
Gerd Lippold ◽  
Karsten Otte ◽  
Hermann Schlemm ◽  
Wolfgang Grill
Keyword(s):  
Surface Layer ◽  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Compositional Variation ◽  
Cu Content ◽  
Β Phase ◽  
Two Phases ◽  
Thermal Stability Of ◽  
Process Annealing ◽  
Thermal Cycling Process

ABSTRACTTo introduce atomic hydrogen into Cu-chalcopyrite samples, low energy broad beam ion implantation into heated targets was used. In addition to the expected hydrogen diffusion into the sample from the implanted thin surface layer, another hydrogen-related effect was observed. As demonstrated for single crystalline CuInSe2, at target temperatures above 150°C a surface layer becomes In-rich. Two phases, the CuInSe2 α-phase and a In-rich phase similar to the reported ordered vacancy compounds (β-phase) coexist, as detected by Raman spectroscopy. The depth profile and the thermal stability of this hydrogen-related compositional variation are investigated. Based on the results we discuss a model of this effect, involving a copper in-diffusion, caused by the hydrogenation due to filling of Cu vacancies and possible substitution of Cu by H. The observed β-phase-like compound is unstable against annealing above 180°C, but can be restored in a thermal cycling process. Annealing for 1.5 h at 400°C removes it completely and restores the asgrown CuInSe2 surface. A decrease of the hydrogen concentration in the surface layer due to redistribution and out-diffusion, followed by the recovery of the Cu content, might be responsible for this behaviour.

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