Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice

2011 ◽  
Author(s):  
Koushik Banerjee ◽  
Jun Huang ◽  
Siddhartha Ghosh ◽  
Runshen Xu ◽  
Christos G. Takoudis ◽  
...  
Keyword(s):  
Zinc Sulfide ◽  
Type Ii ◽  
Strained Layer ◽  
Long Wavelength ◽  
Surface Study ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

Quantum Well and Quantum Dot Based Detector Arrays for Infrared Imaging

2008 ◽  
Vol 1076 ◽  
Author(s):  
Sarath Gunapala ◽  
Sumith Bandara ◽  
Cory Hill ◽  
David Ting ◽  
John Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Imaging ◽  
Incident Light ◽  
Focal Plane Arrays ◽  
Infrared Photodetector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Long Wavelength Infrared ◽  
Reflection Grating

ABSTRACTA mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 320x256 pixel quantum well infrared photodetector (QWIP) dualband focal plane arrays (FPAs) have been demonstrated with excellent imagery. Currently, we are developing a 1024x1024 pixel simultaneous pixel co-registered dualband QWIP FPA. In addition, epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format FPAs. The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb both 45° and normal incident light, therefore a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 microns, with peak detectivity reaching ∼ 1 × 1010 Jones at 77 K. The devices were fabricated into the first LWIR 640x512 pixel QDIP FPA, which has produced excellent infrared imagery with NETD of 40 mK at 60K operating temperature.

On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared

2005 ◽  
Vol 87 (15) ◽  
pp. 151113 ◽  
Author(s):  
Andrew Hood ◽  
Manijeh Razeghi ◽  
Edward H. Aifer ◽  
Gail J. Brown
Keyword(s):  
Surface Passivation ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

2007 ◽  
Vol 90 (23) ◽  
pp. 233513 ◽  
Author(s):  
Andrew Hood ◽  
Pierre-Yves Delaunay ◽  
Darin Hoffman ◽  
Binh-Minh Nguyen ◽  
Yajun Wei ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Design of cooled long-wavelength infrared imaging optical system

2021 ◽  
Vol 0 (0) ◽  
pp. 1-7
Author(s):  
SHAN Qiu-sha ◽  
◽  
◽  
LIU zhao-hui ◽  
CHEN Rong-li ◽  
...  
Keyword(s):  
Optical System ◽  
Infrared Imaging ◽  
Long Wavelength ◽  
Long Wavelength Infrared
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