Design of cooled long-wavelength infrared imaging optical system

2021 ◽  
Vol 0 (0) ◽  
pp. 1-7
Author(s):  
SHAN Qiu-sha ◽  
◽  
◽  
LIU zhao-hui ◽  
CHEN Rong-li ◽  
...  
Keyword(s):  
Optical System ◽  
Infrared Imaging ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals Upconversion raster scanning microscope for long-wavelength infrared imaging of breast cancer microcalcifications

2018 ◽  
Vol 9 (10) ◽  
pp. 4979 ◽  
Author(s):  
Yu-Pei Tseng ◽  
Pascaline Bouzy ◽  
Christian Pedersen ◽  
Nick Stone ◽  
Peter Tidemand-Lichtenberg
Keyword(s):  
Breast Cancer ◽  
Infrared Imaging ◽  
Scanning Microscope ◽  
Long Wavelength ◽  
Raster Scanning ◽  
Long Wavelength Infrared

Long Wavelength Infrared Continuous Zoom Optical System

2011 ◽  
Author(s):  
Hong-yun Gao ◽  
Ping Fan ◽  
Meng-wei Chen ◽  
Ying-ping Yang
Keyword(s):  
Optical System ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Tunable Fabry–Perot etalon-based long-wavelength infrared imaging spectroradiometer

1999 ◽  
Vol 38 (12) ◽  
pp. 2594 ◽  
Author(s):  
William J. Marinelli ◽  
Christopher M. Gittins ◽  
Alan H. Gelb ◽  
B. David Green
Keyword(s):  
Infrared Imaging ◽  
Long Wavelength ◽  
Fabry Perot ◽  
Long Wavelength Infrared

Aircraft engine-mounted camera system for long wavelength infrared imaging of in-service thermal barrier coated turbine blades

2014 ◽  
Vol 85 (12) ◽  
pp. 124902 ◽  
Author(s):  
James Markham ◽  
Joseph Cosgrove ◽  
James Scire ◽  
Charles Haldeman ◽  
Ian Agoos
Keyword(s):  
Infrared Imaging ◽  
Turbine Blades ◽  
Aircraft Engine ◽  
Thermal Barrier ◽  
Camera System ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals Stray light analysis of catadioptric long-wavelength infrared optical system

2019 ◽  
Vol 147 ◽  
pp. 203-209
Author(s):  
Shi Chunlei ◽  
Li Xiaoping
Keyword(s):  
Optical System ◽  
Stray Light ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

A high numerical aperture, polarization-insensitive metalens for long-wavelength infrared imaging

2018 ◽  
Vol 113 (20) ◽  
pp. 201104 ◽  
Author(s):  
Qingbin Fan ◽  
Mingze Liu ◽  
Cheng Yang ◽  
Le Yu ◽  
Feng Yan ◽  
...  
Keyword(s):  
Infrared Imaging ◽  
Numerical Aperture ◽  
High Numerical Aperture ◽  
Long Wavelength ◽  
Polarization Insensitive ◽  
Long Wavelength Infrared

Long wavelength infrared dual field-of-view optical system

2007 ◽  
Author(s):  
Tao Xiong ◽  
Chang-cheng Yang
Keyword(s):  
Optical System ◽  
Field Of View ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

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