The influence of size on the photoluminescence properties of ZnO nanostructures

2021 ◽  
Vol 23 (2) ◽  
pp. 40-44
Author(s):  
R.R. Jalolov ◽  
B.N. Rustamova ◽  
Sh.Z. Urolov ◽  
Z.Sh. Shaymardanov

This paper describes methods for synthesizing different nanostructures of ZnO in aqueous solutions at low temperatures and examines the effect of the size of the synthesized samples on the photoluminescence (PL) spectra. As the diameters of the nanostructures increased, a decrease in the ratio of the intensity of the ultraviolet radiation band to the intensity of the yellow radiation band in the PL spectrum observed. It is found that changing the diameters of nanostructures from 15 nm to 1000 nm leads to a decrease in their bandgap energy (Eg) from 3.28 to 3.21 eV. When the diameters of the nanostructures were less than ~400 nm, it was found that the energy of the band gap was strongly depend on the size of the nanostructure, and that the bond was weaker as the size of the nanostructures exceeded 400 nm.

RSC Advances ◽  
2015 ◽  
Vol 5 (121) ◽  
pp. 100228-100234 ◽  
Author(s):  
Yun-Yang Lee ◽  
Hsieh-Yu Li ◽  
Shih-Jiuan Chiu ◽  
Wen-Li Liang ◽  
Pi-Li Yeh ◽  
...  

Flower-like CuO spheres anchored on electrospun PVDF fiber surfaces as catalytic membranes for the photodegradation of rhodamine B aqueous solutions.


2008 ◽  
Vol 40 (1) ◽  
pp. 1-15 ◽  
Author(s):  
Sudhakar S. Dhondge ◽  
Chandrashekhar Pandhurnekar ◽  
L. Ramesh

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.


2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).


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