Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

2012 ◽  
Vol 27 (10) ◽  
pp. 105023 ◽  
Author(s):  
Nils A K Kaufmann ◽  
Amélie Dussaigne ◽  
Denis Martin ◽  
Pierre Valvin ◽  
Thierry Guillet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well

Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure

2002 ◽  
Vol 46 (8) ◽  
pp. 1123-1126 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Indium Content ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Annealing Effects ◽  
High Indium Content

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

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