scholarly journals Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

2021 ◽  
Vol 2 (7) ◽  
pp. 39-50
Author(s):  
James F. Buckwalter ◽  
Mark J. W. Rodwell ◽  
Kang Ning ◽  
Ahmed Ahmed ◽  
Andrea Arias-Purdue ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Amplifier ◽  
High Efficiency ◽  
Fundamental Limits ◽  
Class A ◽  
Energy Efficient Communication ◽  
Efficient Communication ◽  
Class B ◽  
Matching Element ◽  
Circuit Techniques

This paper reviews the requirements for future digital arrays in terms of power amplifier requirements for output power and efficiency and the device technologies that will realize future energy-efficient communication and sensing electronics for the upper millimeter-wave bands (100-300 GHz). Fundamental device technologies are reviewed to compare the needs for compound semiconductors and silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT process that have demonstrated record efficiency and power around 140 GHz while discussing circuit techniques that can be applied in a variety of integrated circuits.

scholarly journals X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1312 ◽  
Author(s):  
Chen Jin ◽  
Yuan Gao ◽  
Wei Chen ◽  
Jianhua Huang ◽  
Zhiyu Wang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
Second Harmonic ◽  
Power Added Efficiency ◽  
Optimum Load ◽  
Measurement Results ◽  
Class B ◽  
Point To Point ◽  
Output Capacitance

This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2.

scholarly journals Prelinearized Class-B Power Amplifier for Piezoelectric Transducers and Portable Ultrasound Systems

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 287 ◽  
Author(s):  
Hojong Choi
Keyword(s):  
Power Amplifier ◽  
Power Amplifiers ◽  
Heat Dissipation ◽  
Piezoelectric Transducers ◽  
Battery Life ◽  
Portable Ultrasound ◽  
Class A ◽  
Class B ◽  
Cooling Fans ◽  
Pulse Echo

Portable ultrasound systems typically suffer from unwanted heat and limited battery life, resulting in reduced system performance or the applicable number of piezoelectric transducer elements. This can be a bottleneck in widely used portable ultrasound systems. Class-A power amplifiers are typically used in portable ultrasound systems. However, unwanted heat dissipation needs to be reduced by using large cooling fans and heat pipe structures. To reduce unwanted heat, class-B power amplifiers may be a possible solution. However, the non-linearity of class-B power amplifiers could limit their integration with piezoelectric transducers because non-linearity in the high-voltage output of the power amplifiers deteriorates the sensitivity of portable ultrasound systems. To improve the linearity of the power amplifier, we developed prelinearized class-B power amplifiers for piezoelectric transducers and portable ultrasound systems. To verify our proposed method, we compared the performances of class-B and prelinearized class-B power amplifiers in their pulse-echo responses. Therefore, prelinearized class-B power amplifiers are a possible solution to produce better echo signal performance in piezoelectric transducers and portable ultrasound systems.

A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2463-2467 ◽  
Author(s):  
Michio Yokoyama ◽  
Tetsuya Saito ◽  
Ryoichi Tachibana ◽  
Akihiro Morimoto ◽  
Kazuya Masu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Code Division Multiple Access ◽  
Multiple Access ◽  
High Efficiency ◽  
Cellular System ◽  
Class B ◽  
Code Division Multiple

High efficiency class B GaN power amplifier with dynamic gate biasing for improved linearity

2012 ◽  
Vol 48 (18) ◽  
pp. 1136-1137 ◽  
Author(s):  
P. Medrel ◽  
J.F. Villemazet ◽  
A. Ramadan ◽  
L. Lapierre ◽  
J.M. Nebus ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Class B

A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for CDMA Cellular System

1999 ◽  
Author(s):  
M. Yokoyama ◽  
T. Saito ◽  
R. Tachibana ◽  
A. Morimoto ◽  
K. Masu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Cellular System ◽  
Class B

LINC Method for MMIC Power Amplifier Linearization

2019 ◽  
Vol 12 (5) ◽  
pp. 402-407
Author(s):  
Said Elkhaldi ◽  
Naima Amar Touhami ◽  
Mohamed Aghoutane ◽  
Taj-Eddin Elhamadi
Keyword(s):  
Integrated Circuits ◽  
Power Amplifier ◽  
High Speed ◽  
High Efficiency ◽  
Microwave Integrated Circuits ◽  
Third Order ◽  
Monolithic Microwave Integrated Circuits ◽  
Amplifier Linearization ◽  
Nonlinear Components

Background: This article proposes the design and implementation of a MMIC (monolithic microwave integrated circuits) Power amplifier using the ED02AH process. Methods: The MMIC ED02AH technology have been developed specifically for microwave applications up to millimeter waves, and for high-speed digital circuits. The use of a single branch of a power amplifier can produce high distortion. In the present paper, the Linear amplification with nonlinear components (LINC) method is introduced and applied as a solution to linearize the power amplifier, it can simultaneously provide high efficiency and high linearity. To validate the proposed approach, the design and characterization of a 5.25 GHz LINC Power Amplifier on MMIC technology is presented. Results: Good results have been achieved, and an improvement of about 37.50 dBc and 59 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz. Conclusion: As a result of this method, we can reduce the Carrier Power to Third-Order Intermodulation Distortion Power Ratio. Excellent linearization is obtained almost 37.6 dBc for Δlower C/I and 58.8 dBc for Δupper C/I.

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