This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency operation. The parasitic components are extracted from the transistor's S-parameter measurement, and its geometry dependence is studied with respect to its layout structure. Physical geometry equations are proposed to represent these parasitic components, and by implementing them into the RF model, a scalable RFCMOS model, that is, valid up to 49.85 GHz is demonstrated. A new verification technique is proposed to verify the quality of the developed scalable RFCMOS model. The proposed technique can shorten the verification time of the scalable RFCMOS model and ensure that the coded scalable model file is error-free and thus more reliable to use.
High-Frequency Parameter Extraction of Insulating Transformer Using S-Parameter Measurement