The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

High frequency noise modeling of SiGe HBTs using a direct parameter extraction technique

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174953 ◽

2003 ◽

Cited By ~ 3

Author(s):

U. Basaran ◽

M. Berroth

Keyword(s):

High Frequency ◽

Parameter Extraction ◽

Extraction Technique ◽

Frequency Noise ◽

High Frequency Noise ◽

Noise Modeling

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Fabrication and characterization of InP:Zn layers for optoelectronic and microwave devices

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174921 ◽

2003 ◽

Author(s):

V.F. Andrievski ◽

E.V. Guschinskaya ◽

S.A. Malyshev

Keyword(s):

Microwave Devices ◽

Fabrication And Characterization

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On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174936 ◽

2003 ◽

Author(s):

S.R. Sheng ◽

S.P. McAlister ◽

C. Storey ◽

L.-S. Lee ◽

H.P. Hwang

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Temperature Bias ◽

Degradation Temperature ◽

Dc Characteristics ◽

Polysilicon Emitter

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Realisation of a SiGe-HBT direct down conversion receiver for UMTS base stations

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174935 ◽

2003 ◽

Cited By ~ 5

Author(s):

T. Bitzer ◽

U. Karthaus ◽

A. Pascht ◽

K. Weese

Keyword(s):

Base Stations ◽

Sige Hbt ◽

Down Conversion

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Improving baseband performance of four-cascaded single stage distributed amplifiers for high speed optical communication

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174967 ◽

2003 ◽

Cited By ~ 1

Author(s):

Ka Lun Koon ◽

Zhirun Hu ◽

P. Langlois ◽

A.A. Rezazadeh

Keyword(s):

Optical Communication ◽

High Speed ◽

Single Stage ◽

Distributed Amplifiers

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Low cost manufacture of microwave devices

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174947 ◽

2003 ◽

Author(s):

M.J. Kelly

Keyword(s):

Low Cost ◽

Microwave Devices

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Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174975 ◽

2003 ◽

Cited By ~ 1

Author(s):

J. Sexton ◽

M. Missous

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Annealing Experiments

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Comparison of two different isolation schemes for n-type InP by helium implantation

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174948 ◽

2003 ◽

Author(s):

P. Too ◽

S. Ahmed ◽

B.J. Sealy ◽

R. Gwilliam

Keyword(s):

Helium Implantation

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Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174930 ◽

2003 ◽

Author(s):

F. Medjdoub ◽

D. Theron ◽

F. Dessenne ◽

R. Fauquembergue ◽

J.C. de Jaeger

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Etch Stop ◽

Etch Stop Layer

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Effect of polarization charges on electron transport properties of Al/sub 0.2/Ga/sub 0.8/N/GaN HFETs

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174952 ◽

2003 ◽

Author(s):

H. Arabshahi

Keyword(s):

Electron Transport ◽

Transport Properties ◽

Electron Transport Properties

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The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High frequency noise modeling of SiGe HBTs using a direct parameter extraction technique

Fabrication and characterization of InP:Zn layers for optoelectronic and microwave devices

On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

Realisation of a SiGe-HBT direct down conversion receiver for UMTS base stations

Improving baseband performance of four-cascaded single stage distributed amplifiers for high speed optical communication

Low cost manufacture of microwave devices

Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

Comparison of two different isolation schemes for n-type InP by helium implantation

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

Effect of polarization charges on electron transport properties of Al/sub 0.2/Ga/sub 0.8/N/GaN HFETs

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The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High frequency noise modeling of SiGe HBTs using a direct parameter extraction technique

Fabrication and characterization of InP:Zn layers for optoelectronic and microwave devices

On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

Realisation of a SiGe-HBT direct down conversion receiver for UMTS base stations

Improving baseband performance of four-cascaded single stage distributed amplifiers for high speed optical communication

Low cost manufacture of microwave devices

Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

Comparison of two different isolation schemes for n-type InP by helium implantation

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

Effect of polarization charges on electron transport properties of Al/sub 0.2/Ga/sub 0.8/N/GaN HFETs

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Latest Publications