scholarly journals Pulsed Inductively Coupled Plasma Discharge Simulation for Semiconductor Processing in 2D Axisymmetric Structure

2020 ◽  
Vol 29 (6) ◽  
pp. 162-166
Author(s):  
Yejin Shon ◽  
Sora Lee ◽  
Dong-gil Kim ◽  
Deuk-Chul Kwon ◽  
HeeHwan Choe
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Discharge ◽  
Semiconductor Processing ◽  
Inductively Coupled ◽  
Discharge Simulation ◽  
Axisymmetric Structure

scholarly journals Simulation study of an inductively coupled plasma discharge with different copper coil designs and gas compositions

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085228 ◽  
Author(s):  
Fan Lei ◽  
Xiaoping Li ◽  
Donglin Liu ◽  
Yanming Liu ◽  
Shun Zhang
Keyword(s):  
Simulation Study ◽  
Inductively Coupled Plasma ◽  
Plasma Discharge ◽  
Inductively Coupled ◽  
Copper Coil

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

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