Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

A Self-powered and Sensitive Terahertz Photodetection based on PdSe2

Chinese Physics B ◽

10.1088/1674-1056/ac4908 ◽

2022 ◽

Author(s):

Jie Zhou ◽

Xueyan Wang ◽

Zhiqingzi Chen ◽

Libo Zhang ◽

Chengyu Yao ◽

...

Keyword(s):

Homeland Security ◽

Room Temperature ◽

Performance Enhancement ◽

Rapid Development ◽

Rapid Response ◽

Medical Sciences ◽

Terahertz Detection ◽

Order Of Magnitude ◽

Self Powered ◽

Low Dimensional

Abstract With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology and medical sciences, communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1 THz and 0.3 THz irradiation, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1 THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity, and speed, which may have great application in terahertz detection.

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Room-temperature heterodyne terahertz detection with quantum-level sensitivity

Nature Astronomy ◽

10.1038/s41550-019-0828-6 ◽

2019 ◽

Vol 3 (11) ◽

pp. 977-982 ◽

Cited By ~ 9

Author(s):

Ning Wang ◽

Semih Cakmakyapan ◽

Yen-Ju Lin ◽

Hamid Javadi ◽

Mona Jarrahi

Keyword(s):

Room Temperature ◽

Quantum Level ◽

Terahertz Detection

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Fast and sensitive bolometric terahertz detection at room temperature through thermomechanical transduction

Journal of Applied Physics ◽

10.1063/1.5045256 ◽

2019 ◽

Vol 125 (15) ◽

pp. 151602 ◽

Cited By ~ 13

Author(s):

Ya Zhang ◽

Suguru Hosono ◽

Naomi Nagai ◽

Sang-Hun Song ◽

Kazuhiko Hirakawa

Keyword(s):

Room Temperature ◽

Terahertz Detection

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A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽

10.1155/1998/45289 ◽

1998 ◽

Vol 6 (1-4) ◽

pp. 213-216

Author(s):

Mahbub Rashed ◽

W.-K. Shih ◽

S. Jallepalli ◽

R. Zaman ◽

T. J. T. Kwan ◽

...

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

High Field ◽

Room Temperature ◽

Monte Carlo Study ◽

Strained Silicon ◽

Simulation Tool ◽

Bulk Materials ◽

Strained Si ◽

Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

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Enhanced terahertz detection of multigate graphene nanostructures

Nanophotonics ◽

10.1515/nanoph-2021-0573 ◽

2022 ◽

Vol 0 (0) ◽

Author(s):

Juan A. Delgado-Notario ◽

Wojciech Knap ◽

Vito Clericò ◽

Juan Salvador-Sánchez ◽

Jaime Calvo-Gallego ◽

...

Keyword(s):

High Performance ◽

Room Temperature ◽

Thz Radiation ◽

Electron Hole ◽

Back Gate ◽

Potential Barriers ◽

Terahertz Detection ◽

Wide Range ◽

Order Of Magnitude ◽

Effect Transistor

Abstract Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt n+n (or p+p) or np (or pn) junctions with different potential barriers are formed along the graphene layer leading to enhancement of the THz rectified signal by about an order of magnitude. The plasmonic rectification for graphene containing np junctions is interpreted as due to the plasmonic electron-hole ratchet mechanism, whereas, for graphene with n+n junctions, rectification is attributed to the differential plasmonic drag effect. This work shows a new way of responsivity enhancement and paves the way towards new record performances of graphene THz nano-photodetectors.

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