Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2011.15.6.1338 ◽

2011 ◽

Vol 15 (6) ◽

pp. 1338-1342

Author(s):

Hak-Kee Jung ◽

Ji-Hyung Han ◽

Jae-Hyung Lee ◽

Dong-Soo Jeong ◽

Jong-In Lee ◽

...

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Threshold Voltage Shift for Doping Profile of Asymmetric Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2015.19.4.903 ◽

2015 ◽

Vol 19 (4) ◽

pp. 903-908

Author(s):

Hakkee Jung

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Double Gate Mosfet

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Conduction Path Dependent Threshold Voltage for the Ratio of Top and Bottom Oxide Thickness of Asymmetric Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2014.18.11.2709 ◽

2014 ◽

Vol 18 (11) ◽

pp. 2709-2714

Author(s):

Hakkee Jung

Keyword(s):

Threshold Voltage ◽

Oxide Thickness ◽

Double Gate ◽

Conduction Path ◽

Double Gate Mosfet ◽

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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

2009 International Multimedia, Signal Processing and Communication Technologies ◽

10.1109/mspct.2009.5164172 ◽

2009 ◽

Author(s):

P.K. Tiwari ◽

S. Kumar ◽

S. Mittal ◽

V. Srivastava ◽

U. Pandey ◽

...

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Channel Potential

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2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile

Lecture Notes in Electrical Engineering - Future Information Communication Technology and Applications ◽

10.1007/978-94-007-6516-0_44 ◽

2013 ◽

pp. 409-417

Author(s):

Hakkee Jung ◽

Dongsoo Cheong

Keyword(s):

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET

2016 9th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2016.7853904 ◽

2016 ◽

Author(s):

Md. Arafat Mahmud ◽

Md. Tashfiq Bin Kashem ◽

Samia Subrina

Keyword(s):

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2011.1151 ◽

2011 ◽

Vol 6 (2) ◽

pp. 207-213

Author(s):

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Short Channel ◽

Threshold Voltage Model

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Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981535 ◽

2002 ◽

Author(s):

Yin Huaxiang ◽

Xu Qiuxia

Keyword(s):

Doping Profile ◽

Double Gate ◽

Design Considerations ◽

Double Gate Mosfet

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Bottom Gate Voltage Dependent Threshold Voltage Roll-off of Asymmetric Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2014.18.6.1422 ◽

2014 ◽

Vol 18 (6) ◽

pp. 1422-1428

Author(s):

Hakkee Jung

Keyword(s):

Threshold Voltage ◽

Gate Voltage ◽

Double Gate ◽

Double Gate Mosfet ◽

Voltage Dependent ◽

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Threshold Voltage Roll-off by Structural Parameters for Sub-10 nm Asymmetric Double Gate MOSFET

TELKOMNIKA (Telecommunication Computing Electronics and Control) ◽

10.12928/telkomnika.v16i5.10248 ◽

2018 ◽

Vol 16 (5) ◽

pp. 2444

Author(s):

Hakkee Jung

Keyword(s):

Threshold Voltage ◽

Structural Parameters ◽

Double Gate ◽

Double Gate Mosfet

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