Connexons Coupling to Gap Junction Channel: Potential Role for Extracellular Protein Stabilization Centers

Connexin (Cx) proteins establish intercellular gap junction channels (Cx GJCs) through coupling of two apposed hexameric Cx hemichannels (Cx HCs, connexons). Pre- and post-GJ interfaces consist of extracellular EL1 and EL2 loops, each with three conserved cysteines. Previously, we reported that known peptide inhibitors, mimicking a variety of Cx43 sequences, appear non-selective when binding to homomeric Cx43 vs. Cx36 GJC homology model subtypes. In pursuit of finding potentially Cx subtype-specific inhibitors of connexon-connexon coupling, we aimed at to understand better how the GJ interface is formed. Here we report on the discovery of Cx GJC subtype-specific protein stabilization centers (SCs) featuring GJ interface architecture. First, the Cx43 GJC homology model, embedded in two opposed membrane bilayers, has been devised. Next, we endorsed the fluctuation dynamics of SCs of the interface domain of Cx43 GJC by applying standard molecular dynamics under open and closed cystine disulfide bond (CS-SC) preconditions. The simulations confirmed the major role of of the unique trans-GJ SC pattern comprising conserved (55N, 56T) and non-conserved (57Q) residues of the apposed EL1 loops in the stabilization of the GJC complex. Importantly, clusters of SC patterns residing close to the GJ interface domain appear to orient the interface formation via the numerous SCs between EL1 and EL2. These include central 54CS-S198C or 61CS-S192C contacts with residues 53R, 54C, 55N, 197D, 199F or 64V, 191P, respectively. In addition, we revealed that GJC interface formation is favoured when the psi dihedral angle of the nearby 193P residue is stable around 180° and the interface SCs disappear when this angle moves to the 0° to −45° range. The potential of the association of non-conserved residues with SC motifs in connexon-connexon coupling makes the development of Cx subtype-specific inhibitors viable.

A comprehensive analytical model for ambipolar transport in nano-dimensional VOPc/p-6P OHJFET for applications in organic electronics

This paper presents a compact analytical DC model for high mobility VOPc (vanadyl pthalocyanine)/p-6P (para-sexiphenyl) ambipolar organic heterojunction field-effect transistor (OHJFET). The proposed model accounts for both unipolar and ambipolar regimes of VOPc/p-6P ambipolar OHJFET by considering spatial charge carrier density in the channel. The model incorporates subthreshold conduction phenomenon in addition to describing beyond threshold transport. The model is extended to describe ambipolar regime occurring in subthreshold region at low drain to source voltage, VDS. Device characteristics and various parameters obtained are presented and are further used to model recombination zone and channel potential profile. Results obtained, are compared with available experimental data and a good match is observed.

Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual slope compared with a conventional GAA NAND structure, which leads to excellent reliability characteristics in program disturbance, pass disturbance and oxide break down issue. As a result, the GAAB structure is expected to be appropriate for a high stacking structure of future memory structure.

A performance Analysis of DM-DG and TM-DG TFETs Analytical Models for Low Power Applications

Device Modeling is utilized to engendering incipient device models for the demeanor of the electrical devices predicated on fundamental physics. Modeling of the device may also include the creation of Compact models. An emerging device type of transistor is the Tunnel Field-Effect transistor that achieves compactness and speed during device modeling. This article presents an analytical comparative study of duel material DG TFETs and triple Material DG TFETs with gate oxide structure . Here the implementation of device modeling is done by solving Poisson’s equation with Parabolic Approximation Technique(PAT).The process of formulation of drain current(Id) model is based on integrating the BTBT generation. A Transconductance model of the device is additionally developed utilizing this drain current model of TFET. Surface potential is calculated by utilizing the channel potential model. The electrical properties like Surface potential〖(Ψ〗_(s,i)), Drain current (Id ), and Electric field(Ei) have been compared for both Duel material DG-TFET and Triple material DG-TFET. The comparison statement of DMDG-TFETs and TMDG-TFETs provide improved performance. The analytical model of the device results are compared with simulated results for DMDG TFET and TMDG TFET and good acquiescent is examined.

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (NDn), channel thickness (tsi), oxide thickness (tox), and channel length ratio (L1 : L2). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field Effect Transistor (NCFETis presented. This paper shows the effect of ferroelectric material in MOSFET structure by replacing the insulator in the conventional MOSFET. It should be possible to obtain a steeper subthreshold swing (SS) compared to the one without a ferroelectric material layer, thus breaking the fundamental limit on the operating voltage of MOSFET. 27% of the subthreshold slope reduction is observed by introducing ferroelectric in the dielectric layer compared to the conventional MOSFETs. Hence, the power dissipation in MOSFET can be mitigated and shine to a new technology of a low voltage/low power transistor operation. ABSTRAK: Transistor Kesan Medan Konvensional (FET) terkenal memerlukan sekurang-kurangnya 60mV / dekad pada 300K perubahan pada saluran yang berpotensi untuk mengubah arus dengan faktor 10. Oleh kerana itu, 60mV / dekad menjadi hambatan transistor hari ini. Kajian komprehensif mengenai Negative Capacitance Field Effect Transistor (NCFETis dikemukakan. Makalah ini menunjukkan kesan bahan ferroelektrik dalam struktur MOSFET dengan mengganti penebat dalam MOSFET konvensional. Sebaiknya dapatkan swing swing subthreshold (SS) yang lebih curam berbanding dengan satu tanpa lapisan bahan ferroelektrik, sehingga melanggar had asas pada voltan operasi MOSFET. 27% pengurangan cerun subthreshold diperhatikan dengan memperkenalkan ferroelektrik di lapisan dielektrik berbanding dengan MOSFET konvensional. Oleh itu, pelesapan daya dalam MOSFET dapat dikurangkan dan bersinar dengan teknologi baru operasi transistor voltan rendah / kuasa rendah.

Calculation Method and Application of Inter-Regional and Inter-Provincial Market Trading Space for Promoting the Consumption of Clean Energy

Inter-provincial market trading is putting up with to implement the national energy strategy, increasing clean energy consuming and optimization energy allocation in large-scale. To promote energy consumption, the inter-province power transmission channel’ potential needs to be full excavate to deal with clean energy fluctuation, improving trading frequency and reduce transaction period. This article puts up with an inter-province power market trading space calculation method to calculate the available power transmission ability of inter-provincial transmission channel, discovering transmission channel and releasing transaction space. Besides, for certain transmission channel or supply-demand province’s electricity requirements, the calculation method can explore the trading market space, organizing clean energy evacuation to improve transmission channel utilization and safety checking pass rates, reducing blocking.