AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.
THEORETICAL STUDY ON THE ELECTRONIC STRUCTURE OF STM TUNGSTEN TIP UNDER EXTERNAL ELECTRIC FIELDS
