scholarly journals Phasic discharge characteristics in high power pulsed magnetron sputtering

2014 ◽  
Vol 63 (17) ◽  
pp. 175201
Author(s):  
Wu Zhong-Zhen ◽  
Tian Xiu-Bo ◽  
Li Chun-Wei ◽  
Ricky K. Y. ◽  
Fu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Discharge Characteristics ◽  
Pulsed Magnetron

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

Influence of peak current on substrate plasma sheath properties of Ti films deposited by high-power pulsed magnetron sputtering

2019 ◽  
Vol 33 (01n03) ◽  
pp. 1940016
Author(s):  
C. Z. Chen ◽  
D. L. Ma ◽  
N. Huang ◽  
Y. X. Leng
Keyword(s):  
Magnetron Sputtering ◽  
Equivalent Circuit ◽  
Plasma Density ◽  
High Power ◽  
Equivalent Circuit Model ◽  
Film Structure ◽  
Circuit Model ◽  
Plasma Sheath ◽  
Peak Current ◽  
Pulsed Magnetron

For film deposition, the substrate sheath properties, such as the plasma density, ion-to-atom ratios around the substrate, are more important for the film structure. In this paper, titanium thin films were deposited on grounded substrates by high-power pulsed magnetron sputtering (HPPMS) with the peak current in the range of 113–185 A. A simple and new equivalent circuit model of the sheath was established to study the plasma density around the substrate sheath. The Ti ion-to-atom ratios near substrate were studied by optical emission spectroscopy (OES), and the film structure was detected by transmission electron microscopy (TEM). The results showed that the calculated plasma density was from 0.8 × 10[Formula: see text] to 1.4 × 10[Formula: see text] m[Formula: see text] at different peak current. These were consistent with the results measured by a modified one-grid ion collector using saturation current probe method, which proved our proposed equivalent circuit model was correct. The Ti ion-to-atom ratios around the substrate were estimated at about 24%–62%. The plasma density and ion to atom ratio around the substrate increased with the peak current, and this could lead to a higher film crystallization and preference growth on Ti (101) and (100).

Deposition of rutile TiO2 films by pulsed and high power pulsed magnetron sputtering

2016 ◽  
Vol 293 ◽  
pp. 16-20 ◽  
Author(s):  
W. Schönberger ◽  
H. Bartzsch ◽  
S. Schippel ◽  
T. Bachmann
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Tio2 Films ◽  
Rutile Tio2 ◽  
Pulsed Magnetron

Time-of-flight mass spectrometric diagnostics for ionized and neutral species in high-power pulsed magnetron sputtering of titanium

2020 ◽  
Vol 59 (SH) ◽  
pp. SHHB05
Author(s):  
Keizo Tsukamoto ◽  
Tetsuro Tamura ◽  
Hiromi Matsusaki ◽  
Masahide Tona ◽  
Hiroaki Yamamoto ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Time Of Flight ◽  
Mass Spectrometric ◽  
Neutral Species ◽  
Pulsed Magnetron
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