Synthesis of Copper Nitride Layers by the Pulsed Magnetron Sputtering Method Carried Out under Various Operating Conditions

Copper nitride shows various properties that depend on the structure of the material and is influenced by the change in technical parameters. In the present work, Cu–N layers were synthesized using the pulsed magnetron sputtering method. The synthesis was performed under different operating conditions: direct current (DC) or alternating current (AC) power supply, and various atmospheres: pure Ar and a mixture of Ar + N2. The structural properties of the deposited layers were characterized by X-ray diffraction measurements, and Raman spectroscopy and scanning electron microscopy have been performed. Optical properties were also evaluated. The obtained layers showed tightly packed columnar grain features. The kinetics of the layer growth in the AC mode was lower than that observed in the DC mode, and the layers were thinner and more fine-grained. The copper nitride layers were characterized by the one-phase and two-phase polycrystalline structure of the Cu3N phase with the preferred growth orientation (100). The lattice constant oscillates between 3.808 and 3.815 Å for one-phase and has a value of 3.828 Å for a two-phase structure. Phase composition results were correlated with Raman spectroscopy measurements. Raman spectra exhibited a broad, diffused, and intense signal of Cu3N phase, with Raman shift located at 628–635 cm−1. Studies on optical properties showed that the energy gap ranged from 2.17 to 2.47 eV. The results showed that controlling technical parameters gives a possibility to optimize the structure and phase composition of deposited layers. The reported changes were discussed and attributed to the properties of the material layers and technology method.

Effect of Ion Energy on the Microstructure and Properties of Titanium Nitride Thin Films Deposited by High Power Pulsed Magnetron Sputtering

Titanium nitride (Ti-N) thin films are electrically and thermally conductive and have high hardness and corrosion resistance. Dense and defect-free Ti-N thin films have been widely used in the surface modification of cutting tools, wear resistance components, medical implantation devices, and microelectronics. In this study, Ti-N thin films were deposited by high power pulsed magnetron sputtering (HPPMS) and their plasma characteristics were analyzed. The ion energy of Ti species was varied by adjusting the substrate bias voltage, and its effect on the microstructure, residual stress, and adhesion of the thin films were studied. The results show that after the introduction of nitrogen gas, a Ti-N compound layer was formed on the surface of the Ti target, which resulted in an increase in the Ti target discharge peak power. In addition, the total flux of the Ti species decreased, and the ratio of the Ti ions increased. The Ti-N thin film deposited by HPPMS was dense and defect-free. When the energy of the Ti ions was increased, the grain size and surface roughness of the Ti-N film decreased, the residual stress increased, and the adhesion strength of the Ti-N thin film decreased.