scholarly journals Tight-binding electronic spectra on graphs with spherical topology: II. The effect of spin–orbit interaction

2008 ◽  
Vol 2008 (06) ◽  
pp. P06008 ◽  
Author(s):  
Y Avishai ◽  
J M Luck
Keyword(s):  
Electronic Spectra ◽  
Tight Binding ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spherical Topology

Effects of the interplay between electron–electron interaction and intrinsic spin–orbit interaction on the indirect RKKY coupling in graphene nanoflakes

2019 ◽  
Vol 21 (3) ◽  
pp. 1324-1335 ◽  
Author(s):  
Akram Mirehi ◽  
Ebrahim Heidari-Semiromi
Keyword(s):  
Hubbard Model ◽  
Tight Binding ◽  
Mean Field ◽  
Orbit Interaction ◽  
Electron Interaction ◽  
Magnetic Impurities ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Graphene Nanoflakes ◽  
The Mean

The effects of electron–electron (e–e) interaction and intrinsic spin–orbit interaction (ISOI) on the maximum of the magnetization and the indirect RKKY (Ruderman–Kittel–Kasuya–Yosida) coupling between the magnetic impurities embedded in zig-zag graphene nanoflakes are investigated using the tight-binding Hamiltonian and the mean-field Hubbard model.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines
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