scholarly journals Computational Study on Atomic Structures, Electronic Properties, and Chemical Reactions at Surfaces and Interfaces and in Biomaterials

2018 ◽  
Vol 87 (6) ◽  
pp. 061013 ◽  
Author(s):  
Yu Takano ◽  
Nobuhiko Kobayashi ◽  
Yoshitada Morikawa
2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
N. D. Espinosa-Torres ◽  
J. A. D. Hernández-de-la-Luz ◽  
J. Martínez-Juárez ◽  
J. F. J. Flores-Gracia ◽  
J. A. Luna-López

Not long ago, we developed a theoretical model to describe a set of chemical reactions that can potentially occur during the process of obtaining Silicon Rich Oxide (SRO) films, an off stoichiometry material, notwithstanding the technique used to grow such films. In order to elucidate the physical chemistry properties of such material, we suggested the chemical reactions that occur during the process of growing of SRO films in particular for the case of the Low Pressure Chemical Vapor Deposition (LPCVD) technique in the aforementioned model. The present paper represents a step further with respect to the previous (published) work, since it is dedicated to the calculation by Density Functional Theory (DFT) of the optical and electronic properties of the as-grown and annealed SRO structures theoretically predicted on the basis of the previous work. In this work, we suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the DFT, the contribution that they may have to the phenomenon of luminescence (PL), which is experimentally measured in SRO films. We evaluated the optical and electronic properties of both the as-grown and the annealed structures.


2021 ◽  
Vol 27 (7) ◽  
Author(s):  
Muhammad Tayyab ◽  
Akhtar Hussain ◽  
Waqar Adil Syed ◽  
Shafqat Nabi ◽  
Qurat ul Ain Asif

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57541-57546 ◽  
Author(s):  
Hongping Li ◽  
Shuai Liu ◽  
Lin Chen ◽  
Jun Wu ◽  
Peng Zhang ◽  
...  

First-principles calculations are conducted to investigate the impact of Ta doping on the atomistic structures and electronic properties of the technologically relevant 2H-NbSe2.


2021 ◽  
Vol 23 (36) ◽  
pp. 20553-20559
Author(s):  
Han Wang ◽  
Xiao Wang ◽  
Da Li

We performed a systematic study on the defects in PbI2 of both 1T and 1H phases by DFT calculations. The stability at the neutral and charged states was calculated. The impact of the defects on the electronic properties was also discussed.


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