Performance deterioration of p-type single crystalline silicon solar modules affected by potential induced degradation in photovoltaic power plant

2017 ◽  
Vol 72 ◽  
pp. 18-23 ◽  
Author(s):  
Hong Yang ◽  
Fumei Wang ◽  
He Wang ◽  
Jipeng Chang ◽  
Dengyuan Song ◽  
...  
Keyword(s):  
Power Plant ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Photovoltaic Power ◽  
Performance Deterioration ◽  
P Type

scholarly journals Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Jingsheng Huang ◽  
Hongtao Li ◽  
Yaojie Sun ◽  
He Wang ◽  
Hong Yang
Keyword(s):  
Power Plant ◽  
Crystalline Silicon ◽  
Standard Test ◽  
Photovoltaic Power ◽  
Positive Voltage ◽  
Degradation Pattern ◽  
Performance Deterioration ◽  
One Year ◽  
P Type ◽  
First Time

The regular performance deterioration of P-type crystalline silicon solar modules and module strings caused by potential-induced degradation in a photovoltaic power plant was found in the field. The PID-affected solar modules dismounted from the photovoltaic power plant were further investigated systematically in the laboratory. For the first time, we found that the neutral point of voltage in a module string moved forward to the positive pole for a PID-affected module string as time goes on. Even if low positive voltage is applied to a PID-prone module, it could cause PID. The thermographic and electroluminescence (EL) images of a PID-affected module string also exhibit a regular degradation pattern. This is in good agreement with the measured power loss of the dismounted solar modules under standard test conditions. The results obtained in this paper show that the maximum power degradation rate of solar modules was as high as 53.26% after only one year of operation because of PID in the field. Due to the vast amount of solar modules and incomplete recovery, this is a terrible catastrophe for the owner of a power plant and module producer.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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