Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN

2015 ◽  
Vol 8 (6) ◽  
pp. 065601 ◽  
Author(s):  
Yoshihiro Kangawa ◽  
Akira Kusaba ◽  
Hiroaki Sumiyoshi ◽  
Hideto Miyake ◽  
Michał Boćkowski ◽  
...  
2013 ◽  
Vol 740-742 ◽  
pp. 35-38 ◽  
Author(s):  
Sakiko Kawanishi ◽  
Takeshi Yoshikawa ◽  
Kazuki Morita

Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the “wide” bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.


2013 ◽  
Vol 135 (21) ◽  
pp. 7811-7814 ◽  
Author(s):  
Sung-Yoon Chung ◽  
Young-Min Kim ◽  
Si-Young Choi ◽  
Jin-Gyu Kim

2018 ◽  
Vol 69 (6) ◽  
pp. 678-689 ◽  
Author(s):  
Christiane Stephan-Scherb ◽  
Kathrin Nützmann ◽  
Axel Kranzmann ◽  
Manuela Klaus ◽  
Christoph Genzel

2014 ◽  
Vol 84 (1-2) ◽  
pp. 236-250 ◽  
Author(s):  
Olav Rune Godø ◽  
Jarle Klungsøyr ◽  
Sonnich Meier ◽  
Eirik Tenningen ◽  
Autun Purser ◽  
...  

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