Three-point bending test at extremely high temperature enhanced by real-time observation and measurement

Measurement ◽  
2015 ◽  
Vol 59 ◽  
pp. 171-176 ◽  
Author(s):  
Xufei Fang ◽  
Jingmin Jia ◽  
Xue Feng
2015 ◽  
Vol 2015 (0) ◽  
pp. _J2210402--_J2210402-
Author(s):  
Naoki HAYAKAWA ◽  
Kensuke TSUCHIYA ◽  
Ryutaro FUJISAWA ◽  
Toshifumi KAKIUCHI

2013 ◽  
Vol 740-742 ◽  
pp. 35-38 ◽  
Author(s):  
Sakiko Kawanishi ◽  
Takeshi Yoshikawa ◽  
Kazuki Morita

Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the “wide” bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.


2013 ◽  
Vol 135 (21) ◽  
pp. 7811-7814 ◽  
Author(s):  
Sung-Yoon Chung ◽  
Young-Min Kim ◽  
Si-Young Choi ◽  
Jin-Gyu Kim

2018 ◽  
Vol 69 (6) ◽  
pp. 678-689 ◽  
Author(s):  
Christiane Stephan-Scherb ◽  
Kathrin Nützmann ◽  
Axel Kranzmann ◽  
Manuela Klaus ◽  
Christoph Genzel

JOM ◽  
2019 ◽  
Vol 71 (4) ◽  
pp. 1560-1565
Author(s):  
Florian Falk ◽  
Martina Menneken ◽  
Christiane Stephan-Scherb

2015 ◽  
Vol 8 (6) ◽  
pp. 065601 ◽  
Author(s):  
Yoshihiro Kangawa ◽  
Akira Kusaba ◽  
Hiroaki Sumiyoshi ◽  
Hideto Miyake ◽  
Michał Boćkowski ◽  
...  

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